Inventor
Toru Nagashima
Inventor
Shunan-shi, JP
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices20%
C23CCoating metallic material8%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10DInorganic electric semiconductor devices5%
C01BNon-metallic elements3%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals3%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,822,718Method for producing aluminum nitride single crystal substrate202010,354,862Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal20199,840,790'Highly transparent aluminum nitride single crystalline layers and devices made therefrom'20179,806,205'N-type aluminum nitride monocrystalline substrate'20179,748,410'N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device'20179,708,733'Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy'20179,691,942'Single-cystalline aluminum nitride substrate and a manufacturing method thereof'20179,145,621'Production method of an aluminum based group III nitride single crystal'20158,926,752'Method of producing a group III nitride crystal'20158,129,208'n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof'20127,947,577'Method and apparatus for producing group III nitride'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2020Patents assigned to TOKUYAMA CORP (11)· patent assignee history
2011–2020Based in Shunan-shi, JP· patent location history
2012–2017Patents assigned to NAGASHIMA TORU (5)· patent assignee history
2012–2017Patents assigned to KOUKITU AKINORI (4)· patent assignee history
2012–2017Patents assigned to KUMAGAI YOSHINAO (4)· patent assignee history
2012–2015Patents assigned to TAKADA KAZUYA (2)· patent assignee history
2015Based in Ibaraki, JP· patent location history
2017Based in Yamaguchi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKUYAMA CORP | 11 | 2011–2020 |
| NAGASHIMA TORUself | 5 | 2012–2017 |
| KOUKITU AKINORI | 4 | 2012–2017 |
| KUMAGAI YOSHINAO | 4 | 2012–2017 |
| TAKADA KAZUYA | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shunan-shi, JP | 6 | 2011–2020 |
| Yamaguchi, JP | 4 | 2017 |
| Ibaraki, JP | 1 | 2015 |