Inventor
Melanie W. Cole
Inventor
Churchville, MD, US
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices20%
C23CCoating metallic material13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
Y10TTechnical subjects covered by former us classification10%
B82YSpecific uses or applications of nanostructures7%
C30BSingle-crystal growth7%
H01LSemiconductor devices7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
C04BLime, magnesia3%
F16FSprings3%
PatentTitleYear
10,043,964Pyroelectric device2018D0799824'Carrying device'20179,666,729'Nano structured paraelectric or superparaelectric varactors for agile electronic systems'20178,216,701'Thin film compositionally stratified multi-layer heterostructure for temperature insensitive low dielectric loss and enhanced tunability OTM communications devices and methods for fabrication thereof'20128,053,027'Methods for fabrication of thin film compositionally stratified multi-layer heterostructures for temperature insensitive low dielectric loss and enhanced tunability OTM communications devices'20117,529,154'Hybrid thin film heterostructure modular vibration control apparatus and methods for fabrication thereof'20097,297,626'Process for nickel silicide Ohmic contacts to n-SiC'20077,163,882'Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications'20076,870,378'Test apparatus and method for reliability assessment of high power switching devices'20056,803,071'Paraelectric thin film semiconductor material and method for producing the same'20046,803,134'Paraelectric thin film material and method statement of government interest'20046,759,683'Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications'20046,180,270'Low defect density gallium nitride epilayer and method of preparing the same'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2018Patents assigned to US ARMY (11)· patent assignee history
2001–2018Based in Churchville, MD, US· patent location history
2012Patents assigned to COLE MELANIE WILL (1)· patent assignee history
2017Patents assigned to U S ARMY RES LABORATORY ATTN: RDRL-LOC-I (1)· patent assignee history
2017Patents assigned to UGOWEAR LLC (1)· patent assignee history
2017Based in Prior Lake, MN, US· patent location history
2018Patents assigned to U S ARMY RES LABORATORY ATTN RDRL LOC I (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| US ARMY | 11 | 2001–2018 |
| COLE MELANIE WILLself | 1 | 2012 |
| U S ARMY RES LABORATORY ATTN RDRL LOC I | 1 | 2018 |
| U S ARMY RES LABORATORY ATTN: RDRL-LOC-I | 1 | 2017 |
| UGOWEAR LLC | 1 | 2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Churchville, Maryland, US | 12 | 2001–2018 |
| Prior Lake, Minnesota, US | 1 | 2017 |