Inventor
Kenneth E. Morgan
Inventor
Castleton, NY, US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
Y10TTechnical subjects covered by former us classification20%
H01LSemiconductor devices13%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
H10DInorganic electric semiconductor devices4%
B28DWorking stone or stone-like materials3%
C23CCoating metallic material3%
B24BMachines, devices, or processes for grinding or polishing2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
PatentTitleYear
10,801,127Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them202010,697,085Defect reduction in seeded aluminum nitride crystal growth202010,392,722Defect reduction in seeded aluminum nitride crystal growth201910,316,428Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them201910,125,432Defect reduction in seeded aluminum nitride crystal growth20189,970,127Method and apparatus for producing large, single-crystals of aluminum nitride20189,771,666'Defect reduction in seeded aluminum nitride crystal growth'20179,670,591'Defect reduction in seeded aluminum nitride crystal growth'20179,624,601'Defect reduction in seeded aluminum nitride crystal growth'20179,598,791'Large aluminum nitride crystals with reduced defects and methods of making them'20179,447,519'Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them'20169,447,521'Method and apparatus for producing large, single-crystals of aluminum nitride'20169,034,103'Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them'20158,896,020'Method and apparatus for producing large, single-crystals of aluminum nitride'20148,834,630'Defect reduction in seeded aluminum nitride crystal growth'20148,580,035'Large aluminum nitride crystals with reduced defects and methods of making them'20138,545,629'Method and apparatus for producing large, single-crystals of aluminum nitride'20138,349,077'Large aluminum nitride crystals with reduced defects and methods of making them'20138,323,406'Defect reduction in seeded aluminum nitride crystal growth'20128,222,650'Nitride semiconductor heterostructures and related methods'20128,012,257'Methods for controllable doping of aluminum nitride bulk crystals'20117,638,346'Nitride semiconductor heterostructures and related methods'20097,323,414'Method for polishing a substrate surface'20087,087,112'Nitride ceramics to mount aluminum nitride seed for sublimation growth'20067,037,838'Method for polishing a substrate surface'20065,379,470'Divan for use with fitted sheet'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995Based in Kingston, JM· patent location history
2006–2020Patents assigned to CRYSTAL IS INC (25)· patent assignee history
2006–2020Based in Castleton, NY, US· patent location history
2012–2020Patents assigned to SCHOWALTER LEO J (10)· patent assignee history
2012–2020Patents assigned to BONDOKOV ROBERT T (9)· patent assignee history
2012–2020Patents assigned to MORGAN KENNETH E (9)· patent assignee history
2012–2020Patents assigned to SLACK GLEN A (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CRYSTAL IS INC | 25 | 2006–2020 |
| SCHOWALTER LEO J | 10 | 2012–2020 |
| BONDOKOV ROBERT T | 9 | 2012–2020 |
| MORGAN KENNETH Eself | 9 | 2012–2020 |
| SLACK GLEN A | 9 | 2012–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Castleton, New York, US | 25 | 2006–2020 |
| Kingston, JM | 1 | 1995 |