Inventor
Hans Peter Felsl
Inventor
Munich, DE
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices47%
H01LSemiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
11,018,252Power semiconductor transistor20219,741,795'IGBT having at least one first type transistor cell and reduced feedback capacitance'20179,412,854'IGBT module and a circuit'20169,385,181'Semiconductor diode and method of manufacturing a semiconductor diode'20169,349,829'Method of manufacturing a multi-channel HEMT'20169,293,524'Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings'20169,166,027'IGBT with reduced feedback capacitance'20159,105,682'Semiconductor component with improved dynamic behavior'20159,048,095'Method for manufacturing a semiconductor device having a channel region in a trench'20159,035,355'Multi-channel HEMT'20158,872,264'Semiconductor device having a floating semiconductor zone'20148,860,025'Semiconductor device and method for manufacturing the semiconductor device'20148,853,774'Semiconductor device including trenches and method of manufacturing a semiconductor device'20148,829,562'Semiconductor device including a dielectric structure in a trench'20148,482,062'Semiconductor device having a floating semiconductor zone'20138,264,033'Semiconductor device having a floating semiconductor zone'20127,915,675'IGBT having one or more stacked zones formed within a second layer of the IGBT'20117,842,590'Method for manufacturing a semiconductor substrate including laser annealing'20107,812,427'Soft switching semiconductor component with high robustness and low switching losses'20107,687,891'Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Patents assigned to INFINEON TECHNOLOGIES AG (12)· patent assignee history
2010–2016Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (7)· patent assignee history
2010–2021Based in Munich, DE· patent location history
2010–2014Based in München, DE· patent location history
2012–2016Patents assigned to SCHULZE HANS-JOACHIM (6)· patent assignee history
2012–2016Patents assigned to NIEDERNOSTHEIDE FRANZ-JOSEF (5)· patent assignee history
2014–2016Patents assigned to FELSL HANS-PETER (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 12 | 2010–2021 |
| INFINEON TECHNOLOGIES AUSTRIA | 7 | 2010–2016 |
| SCHULZE HANS-JOACHIM | 6 | 2012–2016 |
| NIEDERNOSTHEIDE FRANZ-JOSEF | 5 | 2012–2016 |
| FELSL HANS-PETERself | 4 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Munich, DE | 18 | 2010–2021 |
| München, DE | 2 | 2010–2014 |