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Inventor

Hisashi Furuya

Inventor
Tokyo, JP

Overview

22→
Patents
1991–2018
Patent span
Chemistry
Primary field (CPC C)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth42%
Y10TTechnical subjects covered by former us classification31%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
F21SNon-portable lighting devices4%
B60QArrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general2%
B66CCranes2%
F21WIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to uses or applications of lighting devices or systems2%
PatentTitleYear
10,076,994Vehicle lamp20189,347,636'Vehicle lighting unit'20168,529,695'Method for manufacturing a silicon wafer'20137,294,203'Heat shielding member of silicon single crystal pulling system'20076,682,597'Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer'20046,663,708'Silicon wafer, and manufacturing method and heat treatment method of the same'20036,428,619'Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer'20026,379,460'Thermal shield device and crystal-pulling apparatus using the same'20025,897,706'Methods for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein'19995,895,527'Single crystal pulling apparatus'19995,891,245'Single crystal pulling method and apparatus for its implementation'19995,873,938'Single crystal pulling apparatus'19995,871,581'Single crystal pulling apparatus'19995,858,087'Single crystal pulling apparatus'19995,843,228'Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus'19985,840,115'Single crystal growth method'19985,797,638'Hoist apparatus for annular member'19985,779,792'Single crystal pulling apparatus'19985,714,267'Seed crystal of silicon single crystal'19985,674,756'Method for intrinsic-gettering silicon wafer'19975,474,022'Double crucible for growing a silicon single crystal'19954,981,549'Method and apparatus for growing silicon crystals'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991Based in Itami, JP· patent location history
1995–2004Patents assigned to MITSUBISHI MATERIAL SILICON (14)· patent assignee history
1995–1999Patents assigned to MITSUBISHI MATERIALS CORP (12)· patent assignee history
1995–1997Based in Saitama, JP· patent location history
1998–2018Based in Tokyo, JP· patent location history
2013Patents assigned to FURUYA HISASHI (1)· patent assignee history
2013Patents assigned to HARADA KAZUHIRO (1)· patent assignee history
2016–2018Patents assigned to STANLEY ELECTRIC CO LTD (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI MATERIAL SILICON141995–2004
MITSUBISHI MATERIALS CORP121995–1999
STANLEY ELECTRIC CO LTD22016–2018
FURUYA HISASHIself12013
HARADA KAZUHIRO12013
Locations
LocationPatentsSpan
Tokyo, JP191998–2018
Saitama, JP21995–1997
Itami, JP11991