Inventor
Ching-Hsiang Hsu
Inventor
Hsinchu, TW
Overview
Patents· 134 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10BElectronic memory devices21%
G11CStatic stores20%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
A61KPreparations for medical, dental or toiletry purposes3%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations3%
G06FElectric digital data processing2%
E05DHinges or suspension devices for doors, windows or wings1%
E05YIndexing scheme associated with subclasses e05d and e05f, relating to construction elements, electric control, power supply, power signal or transmission, user interfaces, mounting or coupling, details, accessories, auxiliary operations not otherwise provided for, application thereof1%
C07HSugars1%
PatentTitleYear
11,021,599Ethylene-vinyl alcohol copolymer resin composition, film, and multi-layer structure comprising the same, as well as methods thereof202110,880,982Light generation system using metal-nonmetal compound as precursor and related light generation method202010,866,519Reticle-masking structure, extreme ultraviolet apparatus, and method of forming the same202010,839,872Random bit cell using an initial state of a latch to generate a random bit202010,760,896Ellipsometer and method for estimating thickness of film202010,685,728Code generating apparatus and one time programming block202010,181,357Code generating apparatus and one time programming block201910,020,268Random number generator device and control method thereof20189,518,327'Metal stripping additive, composition containing the same, and method for stripping metal by using the composition'20169,090,985'Stripping gold components and the method of stripping gold'20158,646,152'Transversely movable hinge and folding device utilizing the same'20148,497,172'Method of manufacturing a read-only memory device with contacts formed therein'20138,466,519'Read-only memory device with contacts formed therein'20138,232,961'Pixel driving structure of displaying three colors of particle display and its displaying colors method'20127,960,792'Non-volatile memory with a stable threshold voltage on SOI substrate'20117,952,934'Method for programming a memory structure'20117,903,472'Operating method of non-volatile memory'20117,855,417'Non-volatile memory with a stable threshold voltage on SOI substrate'20107,855,918'Method for programming a memory structure'20107,846,449'Modified mite allergen and pharmaceutical uses thereof'20107,724,419'Display'20107,682,908'Non-volatile memory and operating method thereof'20107,666,407'Lactobacillus paracasei-containing product'20107,655,782'Modified mite allergen and pharmaceutical uses thereof'20107,551,494'Single-poly non-volatile memory device and its operation method'20097,447,082'Method for operating single-poly non-volatile memory device'20087,433,243'Operation method of non-volatile memory'20087,417,897'Method for reading a single-poly single-transistor non-volatile memory cell'20087,375,854'Method for color correction'20087,272,387'Island type mobile communication arrangement'20077,262,457'Non-volatile memory cell'20077,252,826'Modified mite allergen and pharmaceutical uses thereof'20077,250,654'Non-volatile memory device'20077,242,676'Wireless LAN authentication, authorization, and accounting system and method utilizing a telecommunications network'20077,190,623'Non-volatile memory cell and method of operating the same'20077,172,940'Method of fabricating an embedded non-volatile memory device'20077,060,687'Live vaccines for allergy treatment'20067,001,756'Microorganism strain of GM-020 of Lactobacillus rhamnosus and its use for treating obesity'20066,994,848'Lactobacillus paracasei strain GM-080 for treating allergy related diseases'20066,986,188'Hinge'20066,975,545'Non-volatile memory cell'20056,952,369'Method for operating a NAND-array memory module composed of P-type memory cells'20056,924,527'Split gate flash memory cell structure and method of manufacturing the same'20056,922,363'Method for operating a NOR-array memory module composed of P-type memory cells'20056,920,067'Integrated circuit embedded with single-poly non-volatile memory'20056,914,825'Semiconductor memory device having improved data retention'20056,914,525'Alert system and method for geographic or natural disasters utilizing a telecommunications network'20056,908,818'Contactless channel write/erase flash memory cell and its fabrication method'20056,888,190'EEPROM with source line voltage stabilization mechanism'20056,888,203'Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup'20056,885,587'Single poly embedded EPROM'20056,882,574'Single poly UV-erasable programmable read only memory'20056,853,845'Mobile phone enhanced cell coverage determining method and system for same'20056,847,087'Bi-directional Fowler-Nordheim tunneling flash memory'20056,842,374'Method for operating N-channel electrically erasable programmable logic device'20056,822,286'Cmos-compatible read only memory and method for fabricating the same'20046,819,594'Electrically erasable programmable logic device'20046,801,456'Method for programming, erasing and reading a flash memory cell'20046,770,950'Non-volatile semiconductor memory structure'20046,757,940'Hinge for a notebook computer'20046,750,504'Low voltage single-poly flash memory cell and array'20046,740,556'Method for forming EPROM with low leakage'20046,735,115'Nonvolatile semiconductor memory device having divided bit lines'20046,717,206'Structure of an embedded channel write/erase flash memory cell and fabricating method thereof'20046,711,064'Single-poly EEPROM'20046,710,397'Nonvolatile semiconductor memory device having divided bit lines'20046,678,190'Single poly embedded eprom'20046,677,198'Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof'20046,673,624'Method and device for diagnosing disease patterns in Traditional Chinese Medicine'20046,666,422'Foldable hinge bracket for a laptop computer'20036,654,284'Channel write/erase flash memory cell and its manufacturing method'20036,617,637'Electrically erasable programmable logic device'20036,580,641'Method of forming and operating trench split gate non-volatile flash memory cell structure'20036,573,556'Parasitic surface transfer transistor cell (PASTT cell) for bi-level and multi-level NAND flash memory'20036,566,703'High speed flash memory with high coupling ratio'20036,534,817'Contactless channel write/erase flash memory cell and its fabrication method'20036,518,126'Method of forming and operating trench split gate non-volatile flash memory cell structure'20036,507,066'Highly reliable flash memory structure with halo source'20036,504,763'Nonvolatile semiconductor memory capable of random programming'20036,501,685'Channel write/erase flash memory cell and its manufacturing method'20026,489,202'Structure of an embedded channel write-erase flash memory cell and fabricating method thereof'20026,490,196'Method for operating a nonvolatile memory having embedded word lines'20026,448,607'Nonvolatile memory having embedded word lines'20026,441,443'Embedded type flash memory structure and method for operating the same'20026,429,081'Parasitic surface transfer transistor cell (PASTT cell) for bi-level and multi-level NAND flash memory'20026,423,618'Method of manufacturing trench gate structure'20026,418,060'Method of programming and erasing non-volatile memory cells'20026,383,525'Herbal compositions for treating immunological disorders'20026,281,545'Multi-level, split-gate, flash memory cell'20016,259,618'Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup'20016,251,663'Recombinant eukaryotic plasmids containing allergen-gene and use thereof for the prevention and/or treatment of allergic diseases'20016,214,668'Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof'20016,188,614'Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof'20016,166,410'MONOS flash memory for multi-level logic and method thereof'20006,150,235'Method of forming shallow trench isolation structures'20006,137,122'Latch-up controllable insulated gate bipolar transistor'20006,091,644'Structure of a channel write/erase flash memory cell'20006,087,219'Highly reliable flash memory structure with halo source'20006,083,795'Large angle channel threshold implant for improving reverse narrow width effect'20006,054,348'Self-aligned source process'20006,040,217'Fabricating method of an ultra-fast pseudo-dynamic nonvolatile flash memory'20005,966,329'Apparatus and method for programming PMOS memory cells'19995,958,891'Recombinant eukaryotic plasmids containing allergen-gene and use thereof for the prevention and/or treatment of allergic diseases'19995,923,974'Method of manufacture of memory device with high coupling ratio'19995,898,201'Low resistance, high breakdown voltage, power mosfet'19995,885,868'Process for fabricating SOI compact contactless flash memory cell'19995,877,523'Multi-level split- gate flash memory cell'19995,861,634'Charge collector structure for detecting radiation induced charge during integrated circuit processing'19995,851,879'Method for fabricating compact contactless trenched flash memory cell'19985,851,881'Method of making monos flash memory for multi-level logic'19985,834,806'Raised-bitline, contactless, trenched, flash memory cell'19985,818,085'Body contact for a MOSFET device fabricated in an SOI layer'19985,804,858'Body contacted SOI MOSFET'19985,796,141'Compact contactless trenched flash memory cell'19985,796,142'SOI compact contactless flash memory cell'19985,728,613'Method of using an insulator spacer to form a narrow base width lateral bipolar junction transistor'19985,726,070'Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM'19985,714,412'Multi-level, split-gate, flash memory cell and method of manufacture thereof'19985,705,839'Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology'19985,693,974'Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron MOSFETS'19975,679,591'Method of making raised-bitline contactless trenched flash memory cell'19975,646,431'Surface breakdown reduction by counter-doped island in power mosfet'19975,610,087'Method for fabricating narrow base width lateral bipolar junction transistor, on SOI layer'19975,591,650'Method of making a body contacted SOI MOSFET'19975,573,961'Method of making a body contact for a MOSFET device fabricated in an SOI layer'19965,567,631'Method of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology'19965,567,635'Method of making a three dimensional trench EEPROM cell structure'19965,521,105'Method of forming counter-doped island in power MOSFET'19965,504,031'Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron mosfets'19965,482,888'Method of manufacturing a low resistance, high breakdown voltage, power MOSFET'19965,389,567'Method of forming a non-volatile DRAM cell'19955,331,188'Non-volatile DRAM cell'19945,315,142'High performance trench EEPROM cell'19945,231,299'Structure and fabrication method for EEPROM memory cell with selective channel implants'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–1998Based in Hsin Chu, TW· patent location history
1996–2003Patents assigned to TAIWAN SEMICONDUCTOR MFG (26)· patent assignee history
1996–1999Patents assigned to UNITED MICROELECTRONICS CORP (9)· patent assignee history
1996–2020Based in Hsinchu, TW· patent location history
2002–2020Patents assigned to EMEMORY TECHNOLOGY INC (52)· patent assignee history
2005–2021Based in Taipei, TW· patent location history
2006–2010Patents assigned to GENMONT BIOTECH INC (6)· patent assignee history
2006–2010Based in Tainan, TW· patent location history
2007–2015Patents assigned to HSU CHING-HSIANG (6)· patent assignee history
2018–2020Based in Hsinchu County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EMEMORY TECHNOLOGY INC | 52 | 2002–2020 |
| TAIWAN SEMICONDUCTOR MFG | 26 | 1996–2003 |
| UNITED MICROELECTRONICS CORP | 9 | 1996–1999 |
| GENMONT BIOTECH INC | 6 | 2006–2010 |
| HSU CHING-HSIANGself | 6 | 2007–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 97 | 1996–2020 |
| Hsin Chu, TW | 8 | 1994–1998 |
| Taipei, TW | 6 | 2005–2021 |
| Tainan, TW | 6 | 2006–2010 |
| Hsinchu County, TW | 4 | 2018–2020 |