Inventor
YOONYOUNG CHOI
Inventor
KR
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
G11CStatic stores4%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
12,586,779Composite anode active material and anode and lithium secondary battery including the same202612,426,243Semiconductor memory device and method of fabricating the same202512,419,042Integrated circuit device202512,388,087Composite anode, and lithium secondary battery comprising the same202512,048,143Semiconductor memory device202411,908,797Integrated circuit device having a bit line and a main insulating spacer with an extended portion202411,716,839Semiconductor devices202311,647,627Integrated circuit device202311,637,174Integrated circuit device and method of manufacturing the same202311,616,118Integrated circuit semiconductor device202311,557,596Semiconductor memory device202311,529,794Heteroepitaxial structure and method for forming the same, and nanogap electrode202211,462,610Methods of fabricating capacitor and semiconductor device and semiconductor devices and apparatus including the same202211,302,698Methods of forming a capacitor, semiconductor device, and fine pattern, and semiconductor device formed by the methods202211,217,457Method of fabricating a semiconductor device202211,152,368Semiconductor device including storage node electrode having filler and method for manufacturing the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to SAMSUNG ELECTRONICS CO LTD (13)· patent assignee history
2021–2026Based in KR· patent location history
2022Patents assigned to JAPAN SCIENCE & TECH AGENCY (1)· patent assignee history
2022Based in JP· patent location history
2025–2026Patents assigned to SAMSUNG SDI CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 13 | 2021–2025 |
| SAMSUNG SDI CO LTD | 2 | 2025–2026 |
| JAPAN SCIENCE & TECH AGENCY | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 15 | 2021–2026 |
| JP | 1 | 2022 |