Inventor
François RIEUTORD
Inventor
FR
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems11%
G01NInvestigating or analysing materials by determining their chemical or physical properties6%
PatentTitleYear
12,469,743Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion202512,417,942Process for hydrophilically bonding substrates202512,002,697Method for detecting the splitting of a substrate weakened by implanting atomic species202411,670,540Substrates including useful layers202311,587,826Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (5)· patent assignee history
2023–2025Patents assigned to SOITEC SILICON ON INSULATOR (4)· patent assignee history
2023–2025Based in FR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 5 | 2023–2025 |
| SOITEC SILICON ON INSULATOR | 4 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 5 | 2023–2025 |