Inventor
Etsuo Morita
Inventor
Kanagawa, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10HInorganic light-emitting semiconductor devices having potential barriers21%
C30BSingle-crystal growth6%
H10DInorganic electric semiconductor devices6%
Y10TTechnical subjects covered by former us classification6%
B82YSpecific uses or applications of nanostructures4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
8,741,451'Crystal film, crystal substrate, and semiconductor device'20147,727,331'Crystal firm, crystal substrate, and semiconductor device'20107,364,805'Crystal film, crystal substrate, and semiconductor device'20087,294,201'Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device'20077,244,308'Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device'20077,125,736'Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate'20067,033,854'Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate'20066,967,353'Semiconductor light emitting device and fabrication method thereof'20056,727,523'METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE'20046,501,154'Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure'20026,498,048'METHOD OF MANUFACTURING CRYSTAL OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL SUBSTRATE OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, CRYSTAL FILM OF III-V COMPOUNDS OF THE NITRIDE SYSTEM, AND METHOD OF MANUFACTURING DEVICE'20026,232,623'Semiconductor device on a sapphire substrate'20016,121,636'Semiconductor light emitting device'20006,107,162'Method for manufacture of cleaved light emitting semiconductor device'20005,828,086'Semiconductor light emitting device with a Mg superlattice structure'19985,821,568'Cleaved semiconductor device with {11-20} plane'19985,753,966'Semiconductor device with cleaved surface'19985,705,421'A SOI substrate fabricating method'19985,665,977'Semiconductor light emitting device with defect decomposing and blocking layers'19975,418,374'Semiconductor device having an active layer with regions with different bandgaps'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2014Patents assigned to SONY CORP (20)· patent assignee history
1995–2014Based in Kanagawa, JP· patent location history
1998Patents assigned to MITSUBISHI MATERIAL SILICON (1)· patent assignee history
1998Patents assigned to MITSUBISHI MATERIALS CORP (1)· patent assignee history
2014Patents assigned to BIWA GOSHI (1)· patent assignee history
2014Patents assigned to DOI MASATO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 20 | 1995–2014 |
| BIWA GOSHI | 1 | 2014 |
| DOI MASATO | 1 | 2014 |
| MITSUBISHI MATERIAL SILICON | 1 | 1998 |
| MITSUBISHI MATERIALS CORP | 1 | 1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 20 | 1995–2014 |