Inventor

Ryoko Miyanaga

Inventor

Nara, JP

Overview

2000–2014

Patent span

Electricity

Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light14%

H10DInorganic electric semiconductor devices13%

B82YSpecific uses or applications of nanostructures11%

H10HInorganic light-emitting semiconductor devices having potential barriers10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

H10BElectronic memory devices9%

G11BInformation storage based on relative movement between record carrier and transducer7%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H10NElectric solid-state devices not otherwise provided for6%

G11CStatic stores3%

PatentTitleYear

8,759,190'Current steering element and non-volatile memory element incorporating current steering element'2014 8,445,319'Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element'2013 8,389,990'Nonvolatile semiconductor memory device and manufacturing method thereof'2013 8,344,345'Nonvolatile semiconductor memory device having a resistance variable layer and manufacturing method thereof'2013 8,309,946'Resistance variable element'2012 8,253,136'Nonvolatile semiconductor memory device and manufacturing method thereof'2012 8,242,479'Nonvolatile memory apparatus and manufacturing method thereof'2012 8,022,502'Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element'2011 7,816,688'Semiconductor device and production method therefor'2010 7,709,403'Silicon carbide-oxide layered structure, production method thereof, and semiconductor device'2010 7,507,999'Semiconductor device and method for manufacturing same'2009 7,462,540'Silicon carbide semiconductor device and process for producing the same'2008 7,436,031'Device for implementing an inverter having a reduced size'2008 7,426,227'Semiconductor laser device, optical disk apparatus and optical integrated unit'2008 7,381,993'High-breakdown-voltage insulated gate semiconductor device'2008 7,292,615'Semiconductor laser device, method for fabricating the same, and optical disk apparatus'2007 7,217,954'Silicon carbide semiconductor device and method for fabricating the same'2007 7,214,984'High-breakdown-voltage insulated gate semiconductor device'2007 7,212,556'Semiconductor laser device optical disk apparatus and optical integrated unit'2007 7,160,748'Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device'2007 7,092,423'Semiconductor laser device, optical disk apparatus and optical integrated unit'2006 6,995,396'Semiconductor substrate, semiconductor device and method for fabricating the same'2006 6,995,397'Semiconductor device'2006 6,977,186'Method for manufacturing semiconductor laser optical device'2005 6,921,678'Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device'2005 6,911,351'Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same'2005 6,900,483'Semiconductor device and method for manufacturing the same'2005 6,798,811'Semiconductor laser device, method for fabricating the same, and optical disk apparatus'2004 6,720,586'Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same'2004 6,709,881'Method for manufacturing semiconductor and method for manufacturing semiconductor device'2004 6,586,774'Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device'2003 6,466,597'Semiconductor laser device'2002 6,324,200'Semiconductor laser device'2001 6,169,296'Light-emitting diode device'2001 6,087,725'Low barrier ohmic contact for semiconductor light emitting device'2000 6,072,762'Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (24)· patent assignee history

2000–2014Based in Nara, JP· patent location history

2008–2014Patents assigned to PANASONIC CORP (12)· patent assignee history

2012–2014Patents assigned to MIYANAGA RYOKO (7)· patent assignee history

2012–2014Patents assigned to MIKAWA TAKUMI (5)· patent assignee history

2012–2013Patents assigned to KAWASHIMA YOSHIO (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD	24	2000–2008
PANASONIC CORP	12	2008–2014
MIYANAGA RYOKOself	7	2012–2014
MIKAWA TAKUMI	5	2012–2014
KAWASHIMA YOSHIO	4	2012–2013

Locations

Location	Patents	Span
Nara, JP	36	2000–2014