Inventor

HSIN-YI LEE

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 93 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices29%

H01LSemiconductor devices25%

B82YSpecific uses or applications of nanostructures19%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

C23CCoating metallic material2%

C25DProcesses for the electrolytic or electrophoretic production of coatings1%

A01NPreservation of bodies of humans or animals or plants or parts thereof0%

A61BDiagnosis0%

A61FFilters implantable into blood vessels0%

PatentTitleYear

12,593,498Semiconductor device and forming method thereof2026 12,575,154Methods for pre-deposition treatment of a work-function metal layer2026 12,575,343Gate structures in transistor devices and methods of forming same2026 12,550,374Semiconductor device and formation method thereof2026 12,540,154Glucosamine derivative nanoparticle and preparating method and use thereof2026 12,525,455Gate structures in transistors and method of forming same2026 12,513,961Selective etching to increase threshold voltage spread2025 12,513,956Semiconductor device and method of forming the same2025 12,513,957Transistor gate structures and methods of forming the same2025 12,507,470Semiconductor device and method of fabricating the same2025 12,484,249Gate structures in transistors and method of forming same2025 12,471,342NFET with aluminum-free work-function layer and method forming same2025 12,464,817Semiconductor device and method2025 12,453,153Work-function layers in the gates of pFETs2025 12,451,359Fluorine incorporation method for nanosheet2025 12,439,648Transistor gate structures and methods of forming thereof2025 12,439,666Semiconductor device and methods of manufacture2025 12,426,324Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the same2025 12,426,321Transistor gate structures and methods of forming the same2025 12,417,920Transistor gate structure and method of forming2025 12,414,340Semiconductor structure including nanosheet channel structure and method for forming the same2025 12,402,343Work function tuning in semiconductor devices2025 12,376,340Nanosheet field-effect transistor device and method of forming2025 12,363,974Gate structure of semiconductor device and method of forming same2025 12,349,410Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of forming2025 12,334,390Semiconductor device2025 12,328,923Gate electrode deposition and structure formed thereby2025 12,283,609Gate structure of transistor including a plurality of work function layers and oxygen device and method2025 12,283,613Gate structures in transistors and method of forming same2025 12,243,925Transistor gates and method of forming2025 12,218,199Transistor gate structures and methods of forming the same2025 12,218,200Semiconductor device and method2025 12,176,401Seam-filling of metal gates with Si-containing layers2024 12,176,425Semiconductor device and forming method thereof2024 12,166,074Gate structure in semiconductor device and method of forming the same2024 12,166,095Semiconductor device and method2024 12,142,659Transistor gate structures and methods of forming the same2024 12,132,112Work function control in gate structures2024 12,107,150Electroless plating method for metal gate fill2024 12,087,587Gate structures in transistors and method of forming same2024 12,080,777Composite work function layer formation using same work function material2024 12,068,386Semiconductor devices and methods of forming the same2024 12,068,388Semiconductor device and method of manufacture2024 12,062,695Transistor gate structures and methods of forming the same2024 12,051,721Methods of forming semiconductor devices including gate barrier layers2024 12,046,519Metal gates and methods of forming thereby2024 12,021,116Semiconductor gates and methods of forming the same2024 12,009,391Nanosheet field-effect transistor device and method of forming2024 12,009,264Adjusting work function through adjusting deposition temperature2024 12,002,714Semiconductor device and forming method thereof2024 11,967,504Gate structures in transistor devices and methods of forming same2024 11,955,528Methods of forming FinFET devices2024 11,948,981Seam-filling of metal gates with Si-containing layers2024 11,935,937Nanosheet field-effect transistor device and method of forming2024 11,935,754Transistor gate structure and method of forming2024 11,923,240Method of forming semiconductor device2024 11,923,414Semiconductor device and method2024 11,915,937Fluorine incorporation method for nanosheet2024 11,916,124Transistor gates and methods of forming2024 11,916,114Gate structures in transistors and method of forming same2024 11,908,893Semiconductor device and method of forming the same2024 11,901,362Semiconductor device and method2024 11,855,163Semiconductor device and method2023 11,824,100Gate structure of semiconductor device and method of forming same2023 11,810,948Semiconductor device and method2023 11,810,961Transistor gate structures and methods of forming the same2023 11,742,395Selective etching to increase threshold voltage spread2023 11,715,762Transistor gate structures and methods of forming the same2023 11,699,740Electroless plating method for metal gate fill2023 11,688,797Semiconductor device and forming method thereof2023 11,688,786Semiconductor device and method2023 11,646,311Semiconductor device and method of fabricating the same2023 11,637,180Transistor gate structures and methods of forming the same2023 11,527,621Gate electrode deposition and structure formed thereby2022 11,508,826Composite work function layer formation using same work function material2022 11,502,081Semiconductor device and method2022 11,495,661Semiconductor device including gate barrier layer2022 11,489,059Semiconductor devices, FinFET devices and methods of forming the same2022 11,488,873Metal gates and methods of forming thereby2022 11,450,569Semiconductor device and forming method thereof2022 11,444,198Work function control in gate structures2022 11,443,979Semiconductor device2022 11,437,474Gate structures in transistors and method of forming same2022 11,437,240Transistor gate structure and method of forming2022 11,411,079Semiconductor device and method2022 11,404,554Transistor gates and method of forming2022 11,393,554Device housings with glass beads2022 11,362,002Adjusting work function through adjusting deposition temperature2022 11,302,793Transistor gates and method of forming2022 11,289,578Selective etching to increase threshold voltage spread2022 11,257,921Semiconductor device and method of manufacture2022 11,227,931Nanosheet field-effect transistor device and method of forming2022 11,164,868Semiconductor device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (91)· patent assignee history

2021–2026Based in TW· patent location history

2022Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (1)· patent assignee history

2026Patents assigned to CPC CORP TAIWAN (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	91	2021–2026
CPC CORP TAIWAN	1	2026
HEWLETT PACKARD DEVELOPMENT CO	1	2022

Locations

Location	Patents	Span
TW	93	2021–2026