Inventor
YU-LUNG YEH
Inventor
TW
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10DInorganic electric semiconductor devices14%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
C23CCoating metallic material3%
C25DProcesses for the electrolytic or electrophoretic production of coatings3%
H01JElectric discharge tubes or discharge lamps3%
B81BMicrostructural devices or systems, e.g. micromechanical devices2%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
PatentTitleYear
12,456,655Passivation layer for a semiconductor device and method for manufacturing the same202512,453,203Deep trench isolation structures resistant to cracking202512,368,070LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region202512,369,336Method and system for forming metal-insulator-metal capacitors202512,363,928Surface damage control in diodes202512,297,104Semiconductor structure and formation thereof202512,195,866Plating membrane202512,094,756Semiconductor arrangement comprising isolation structure comprising at least two electrical insulator layers202412,046,615Semiconductor device including deep trench isolation structure comprising dielectric structure and copper structure and method of making the same202412,040,221Fabrication method of metal-free SOI wafer202411,996,429CMOS image sensor structure with microstructures on backside surface of semiconductor layer202411,990,493Image sensor device with reflective structure202411,973,148Surface damage control in diodes202411,830,892Image sensor with a high absorption layer202311,814,743Plating membrane202311,594,459Passivation layer for a semiconductor device and method for manufacturing the same202311,562,923Semiconductor arrangement including a first electrical insulator layer and a second electrical insulator layer and method of making202311,502,160Method and system for forming metal-insulator-metal capacitors202211,393,937QE approach by double-side, multi absorption structure202211,342,372Image sensor device with reflective layer202211,302,734Deep trench isolation structures resistant to cracking202211,232,974Fabrication method of metal-free SOI wafer202211,177,302CMOS image sensor structure with microstructures formed on semiconductor layer2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (23)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 23 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 23 | 2021–2025 |