Inventor

Effendi Leobandung

Inventor

Stormville, NY, US

Overview

2000–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 444 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices26%

H10DInorganic electric semiconductor devices25%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H10BElectronic memory devices4%

B82YSpecific uses or applications of nanostructures3%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%

G06FElectric digital data processing2%

G02BOptical elements, systems or apparatus2%

PatentTitleYear

11,114,479Optoelectronics and CMOS integration on GOI substrate2021 11,107,821Semiconductor structures with deep trench capacitor and methods of manufacture2021 11,088,264Self-aligned channel-only semiconductor-on-insulator field effect transistor2021 11,079,337Secure wafer inspection and identification2021 11,055,610Circuit for CMOS based resistive processing unit2021 11,055,611Circuit for CMOS based resistive processing unit2021 11,055,607Neural network using floating gate transistor2021 11,056,493Semiconductor structures with deep trench capacitor and methods of manufacture2021 11,037,834Simple contact over gate on active area2021 11,031,346Advanced wafer security method including pattern and wafer verifications2021 11,024,636Vertical 3D stack NOR device2021 11,018,123Multi-chip modules2021 11,011,651Tight pitch stack nanowire isolation2021 10,998,311Fabricating gate-all-around transistors having high aspect ratio channels and reduced parasitic capacitance2021 10,997,490Battery-based neural network weights2021 10,984,306Battery-based neural network weights2021 10,985,280Threshold voltage control using channel digital etch2021 10,978,593Threshold voltage control using channel digital etch2021 10,971,604Gate all around fin field effect transistor2021 10,957,780Non-uniform gate dielectric for U-shape MOSFET2021 10,957,802Methods of forming tight pitch stack nanowire isolation2021 10,957,596Caterpillar trenches for efficient wafer dicing2021 10,957,665Direct C4 to C4 bonding without substrate2021 10,949,745Smart logic device2021 10,930,579Self-contained liquid cooled semiconductor packaging2021 10,923,445Monolithic decoupling capacitor between solder bumps2021 10,916,468Semiconductor device with buried local interconnects2021 10,909,444Floating gate for neural network inference2021 10,909,445Floating gate for neural network inference2021 10,903,422Vertically oriented memory structure2021 10,900,953DNA sequencing using MOSFET transistors2021 10,896,979Compact vertical injection punch through floating gate analog memory and a manufacture thereof2021 10,892,164Dual hard mask replacement gate2021 10,891,368Dynamic embedded integrated circuit in trackable item2021 10,886,281Transistor and capacitor structures for analog memory neural network2021 10,879,568Thin film lithium ion battery2020 10,872,954Sidewall image transfer nanosheet2020 10,833,010Integration of artificial intelligence devices2020 10,833,156Self-forming spacers using oxidation2020 10,832,942Non-embedded silicon bridge chip for multi-chip module2020 10,818,838Phase change memory2020 10,802,071Elemental mercury-containing probe card2020 10,804,107Well and punch through stopper formation using conformal doping2020 10,784,169Self-aligned hard mask for epitaxy protection2020 10,784,292Optoelectronics and CMOS integration on GOI substrate2020 10,777,567Epitaxy lateral overgrowth for 3D NAND2020 10,769,327Integrated circuit authentication using mask fingerprinting2020 10,763,340Growing Groups III-V lateral nanowire channels2020 10,741,611Resistive processing units with complementary metal-oxide-semiconductor non-volatile analog memory2020 10,741,532Multi-chip modules2020 10,741,560High resistance readout FET for cognitive device2020 10,714,419Non-planar metal-insulator-metal capacitor formation2020 10,700,017Interchip backside connection2020 10,679,904Stacked vertical devices2020 10,672,983Compact resistive random access memory integrated with a pass gate transistor2020 10,658,483Non-planar field effect transistor devices with wrap-around source/drain contacts2020 10,658,484Non-planar field effect transistor devices with wrap-around source/drain contacts2020 10,629,680Sidewall image transfer nanosheet2020 10,629,601Transistor and capacitor structures for analog memory neural network2020 10,622,283Self-contained liquid cooled semiconductor packaging2020 10,622,207Low external resistance channels in III-V semiconductor devices2020 10,615,178Dual-material mandrel for epitaxial crystal growth on silicon2020 10,605,985Integration of bonded optoelectronics, photonics waveguide and VLSI SOI2020 10,607,838Well and punch through stopper formation using conformal doping2020 10,601,199Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same2020 10,600,783Self-cut sidewall image transfer process2020 10,600,912Self-aligned replacement metal gate spacerless vertical field effect transistor2020 10,600,891Smoothing surface roughness of III-V semiconductor fins formed from silicon mandrels by regrowth2020 10,600,795Integration of floating gate memory and logic device in replacement gate flow2020 10,593,784Double patterning epitaxy Fin2020 10,586,853Non-planar field effect transistor devices with wrap-around source/drain contacts2020 10,580,900Nanosheet channel post replacement gate process2020 10,573,558Caterpillar trenches for efficient wafer dicing2020 10,566,247Local wiring in between stacked devices2020 10,566,417Self-forming spacers using oxidation2020 10,559,493Multifunction single via patterning2020 10,546,878Asymmetric junction engineering for narrow band gap MOSFET2020 10,545,131DNA sequencing using MOSFET transistors2020 10,546,926III-V semiconductor devices with selective oxidation2020 10,535,662Semiconductor structures including an integrated FinFET with deep trench capacitor and methods of manufacture2020 10,529,624Simple contact over gate on active area2020 10,529,739Asymmetric band gap junctions in narrow band gap MOSFET2020 10,522,686Vertical thin film transistor2019 10,483,156Non-embedded silicon bridge chip for multi-chip module2019 10,475,701Mixed wire structure and method of making the same2019 10,461,194Threshold voltage control using channel digital etch2019 10,452,973Smart logic device2019 10,454,239Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings2019 10,446,490Junctionless back end of the line via contact2019 10,438,913Monolithic decoupling capacitor between solder bumps2019 10,418,493Tight pitch stack nanowire isolation2019 10,396,147Grated MIM capacitor to improve capacitance2019 10,389,090Lateral growth of edge-emitting lasers2019 10,367,060III-V semiconductor devices with selective oxidation2019 10,361,300Asymmetric vertical device2019 10,361,207Semiconductor structures with deep trench capacitor and methods of manufacture2019 10,347,717Fabrication of nanowire vertical gate devices2019 10,347,739Extended contact area using undercut silicide extensions2019 10,347,657Semiconductor circuit including nanosheets and fins on the same wafer2019 10,326,004Double patterning epitaxy fin2019 10,325,852Self-aligned vertical transistor with local interconnect2019 10,315,933Pressure differential water distiller2019 10,319,811Semiconductor device including fin having condensed channel region2019 10,319,838III-V fin generation by lateral growth on silicon sidewall2019 10,319,860Overlap capacitance nanowire2019 10,312,160Gate-last semiconductor fabrication with negative-tone resolution enhancement2019 10,311,225Dynamic embedded integrated circuit in trackable item2019 10,303,998Floating gate for neural network inference2019 10,304,947Smoothing surface roughness of III-V semiconductor fins formed from silicon mandrels by regrowth2019 10,304,839Metal strap for DRAM/FinFET combination2019 10,291,414SRAM as physically unclonable function2019 10,283,537Optoelectronics and CMOS integration on GOI substrate2019 10,276,685Heterojunction tunnel field effect transistor fabrication using limited lithography steps2019 10,269,806Semiconductor structures with deep trench capacitor and methods of manufacture2019 10,269,956Asymmetric vertical device2019 10,261,067Method of forming a field effect based nanopore device2019 10,256,319Non-uniform gate dielectric for U-shape MOSFET2019 10,256,608Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same2019 10,249,632Simple integration of non-volatile memory and complementary metal oxide semiconductor2019 10,249,722Reduced parasitic capacitance with slotted contact2019 10,246,745DNA sequencing detection field effect transistor2019 10,249,736Aspect ratio trapping in channel last process2019 10,243,002Asymmetric band gap junctions in narrow band gap MOSFET2019 10,242,991Highly compact floating gate analog memory2019 10,224,415Integrated vertical nanowire memory2019 10,217,512Unit cell with floating gate MOSFET for analog memory2019 10,217,659Dual isolation fin and method of making2019 10,218,150Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings2019 10,211,225FinFET devices wit multiple channel lengths2019 10,211,109Local wiring in between stacked devices2019 10,205,003Surface roughness of III-V fin formed on silicon sidewall by implementing sacrificial buffers2019 10,204,907Metal-insulator-metal capacitor analog memory unit cell2019 10,192,864Lateral BiCMOS replacement metal gate2019 10,177,047Trench gate first CMOS2019 10,177,254III-V compound semiconductor channel post replacement gate2019 10,170,551Sidewall image transfer nanosheet2019 10,170,558Localized and self-aligned punch through stopper doping for finFET2019 10,168,473Integration of bonded optoelectronics, photonics waveguide and VLSI SOI2019 10,141,277Monolithic decoupling capacitor between solder bumps2018 10,141,719Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same2018 10,141,048Stack capacitor for neural network2018 10,135,226Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same2018 10,134,472Floating gate architecture for deep neural network application2018 10,128,199Interchip backside connection2018 10,122,153Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same2018 10,109,575Non-planar metal-insulator-metal capacitor formation2018 10,103,218Densely stacked metal-insulator-metal capacitor and method of forming the same2018 10,103,237Inverted MOSFET with scaling advantage2018 10,103,242Growing groups III-V lateral nanowire channels2018 10,096,697III-V FIN generation by lateral growth on silicon sidewall2018 10,096,975Laterally grown edge emitting laser2018 10,096,689Low end parasitic capacitance FinFET2018 10,090,340Optoelectronic devices with back contact2018 10,090,165Method to improve finFET cut overlay2018 10,090,562Thin film lithium ion battery2018 10,090,429Integrated on chip detector and zero waveguide module structure for use in DNA sequencing2018 10,083,986CMOS with middle of line processing of III-V material on mandrel2018 10,083,987CMOS with middle of line processing of III-V material on mandrel2018 10,079,249Finfet devices with multiple channel lengths2018 10,079,234Metal-insulator-metal capacitor analog memory unit cell2018 10,068,922FinFET devices with multiple channel lengths2018 10,068,994III-V fin generation by lateral growth on silicon sidewall2018 10,068,967Self-forming spacers using oxidation2018 10,061,617Smart memory analog DRAM2018 10,062,752Fabrication of nanowire vertical gate devices2018 10,056,408Structure and method to form a FinFET device2018 10,050,123Integrated vertical nanowire memory2018 10,047,393DNA sequencing using MOSFET transistors2018 10,050,039Semiconductor structures with deep trench capacitor and methods of manufacture2018 10,042,968Semiconductor structures with deep trench capacitor and methods of manufacture2018 10,043,863Grated MIM capacitor to improve capacitance2018 10,037,989III-V lateral bipolar integration with silicon2018 10,030,265DNA sequencing using MOSFET transistors2018 10,032,793Asymmetric junction engineering for narrow band gap MOSFET2018 10,025,029Integration of bonded optoelectronics, photonics waveguide and VLSI SOI2018 10,020,051Stack capacitor for neural network2018 10,014,372Vertical gate-all-around transistor with top and bottom source/drain epitaxy on a replacement nanowire, and method of manufacturing the same2018 10,008,586Dual fill silicon-on-nothing field effect transistor2018 10,007,057Integration of bonded optoelectronics, photonics waveguide and VLSI SOI2018 10,001,598Integration of bonded optoelectronics, photonics waveguide and VLSI SOI2018 9,997,413Stacked vertical devices2018 9,988,678DNA sequencing detection field effect transistor2018 9,984,880Well and punch through stopper formation using conformal doping2018 9,985,100Localized and self-aligned punch through stopper doping for finFET2018 9,985,130Salicide formation on replacement metal gate finFET devices2018 9,985,032Selectively degrading current resistance of field effect transistor devices2018 9,977,185Integration of bonded optoelectronics, photonics waveguide and VLSI SOI2018 9,953,857Semiconductor device with buried local interconnects2018 9,947,969Thin film lithium ion battery2018 9,945,836Field effect based nanopore device2018 9,941,118Dense vertical nanosheet2018 9,935,236Monolithic nano-cavity light source on lattice mismatched semiconductor substrate2018 9,935,178Self-aligned channel-only semiconductor-on-insulator field effect transistor2018 9,935,200Annealed metal source drain overlapping the gate of a fin field effect transistor2018 9,929,255'Robust gate spacer for semiconductor devices'2018 9,917,059'Self-aligned vertical transistor with local interconnect'2018 9,917,151'Forming multi-stack nanowires using a common release material'2018 9,917,014'Vertical air gap subtractive etch back end metal'2018 9,911,602'Embedded gallium-nitride in silicon'2018 9,905,475'Self-aligned hard mask for epitaxy protection'2018 9,904,009'Electrical and optical through-silicon-via (TSV)'2018 9,899,397'Integration of floating gate memory and logic device in replacement gate flow'2018 9,893,489'Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings'2018 9,881,930'Simple integration of non-volatile memory and complementary metal oxide semiconductor'2018 9,882,047'Self-aligned replacement metal gate spacerless vertical field effect transistor'2018 9,881,919'Well and punch through stopper formation using conformal doping'2018 9,859,280'Selectively degrading current resistance of field effect transistor devices'2018 9,859,685'Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials'2018 9,859,397'Growing groups III-V lateral nanowire channels'2018 9,837,453Self-sufficient chip with photovoltaic power supply on back of wafer2017 9,825,143'Single spacer tunnel on stack nanowire'2017 9,818,761'Selective oxidation for making relaxed silicon germanium on insulator structures'2017 9,812,323'Low external resistance channels in III-V semiconductor devices'2017 9,793,405'Semiconductor lateral sidewall growth from a semiconductor pillar'2017 9,786,566'Aspect ratio for semiconductor on insulator'2017 9,786,767'Air gap contact formation for reducing parasitic capacitance'2017 9,780,166'Forming multi-stack nanowires using a common release material'2017 9,779,355'Back propagation gates and storage capacitor for neural networks'2017 9,773,812'Integrated circuit with heterogeneous CMOS integration of strained silicon germanium and group III-V semiconductor materials and method to fabricate same'2017 9,772,463'Intra chip optical interconnect structure'2017 9,773,865'Self-forming spacers using oxidation'2017 9,773,903'Asymmetric III-V MOSFET on silicon substrate'2017 9,761,721'Field effect transistors with self-aligned extension portions of epitaxial active regions'2017 9,761,698'Air gap contact formation for reducing parasitic capacitance'2017 9,754,969'Dual-material mandrel for epitaxial crystal growth on silicon'2017 9,754,935'Raised metal semiconductor alloy for self-aligned middle-of-line contact'2017 9,754,819'Interlevel airgap dielectric'2017 9,742,147'Monolithic integrated photonics with lateral bipolar and BiCMOS'2017 9,735,175'Integrated circuit with heterogeneous CMOS integration of strained silicon germanium and group III-V semiconductor materials and method to fabricate same'2017 9,735,273'Method of forming a III-V compound semiconductor channel post replacement gate'2017 9,728,671'Monolithic nano-cavity light source on lattice mismatched semiconductor substrate'2017 9,722,031'Reduced current leakage semiconductor device'2017 9,722,022'Sidewall image transfer nanosheet'2017 9,716,160'Extended contact area using undercut silicide extensions'2017 9,716,367'Semiconductor optoelectronics and CMOS on sapphire substrate'2017 9,716,030'Aspect ratio for semiconductor on insulator'2017 9,716,056'Integrated circuit with back side inductor'2017 9,711,617'Dual isolation fin and method of making'2017 9,711,648'Structure and method for CMP-free III-V isolation'2017 9,704,866'Integrated circuit having dual material CMOS integration and method to fabricate same'2017 9,704,950'Method to form SOI fins on a bulk substrate with suspended anchoring'2017 9,698,239'Growing groups III-V lateral nanowire channels'2017 9,698,225'Localized and self-aligned punch through stopper doping for finFET'2017 9,687,181'Semiconductor device to be embedded within a contact lens'2017 9,691,709'Semiconductor device security'2017 9,685,521'Lowering parasitic capacitance of replacement metal gate processes'2017 9,685,501'Low parasitic capacitance finFET device'2017 9,685,410'Semiconductor device security'2017 9,685,329'Embedded gallium-nitride in silicon'2017 9,679,775'Selective dopant junction for a group III-V semiconductor device'2017 9,673,056'Method to improve finFET cut overlay'2017 9,666,748'Integrated on chip detector and zero waveguide module structure for use in DNA sequencing'2017 9,660,069'Group III nitride integration with CMOS technology'2017 9,653,347'Vertical air gap subtractive etch back end metal'2017 9,653,464'Asymmetric band gap junctions in narrow band gap MOSFET'2017 9,647,091'Annealed metal source drain overlapping the gate'2017 9,640,442'CMOS fin integration on SOI substrate'2017 9,640,536'Method to make dual material finFET on same substrate'2017 9,627,271'III-V compound semiconductor channel material formation on mandrel after middle-of-the-line dielectric formation'2017 9,627,478'Integrated vertical nanowire memory'2017 9,627,266'Dual-semiconductor complementary metal-oxide-semiconductor device'2017 9,627,276'Self-aligned low defect segmented III-V finFET'2017 9,627,482'Reduced current leakage semiconductor device'2017 9,620,643'Reducing parasitic capacitance and resistance in finFET'2017 9,613,963'Dual material finFET on single substrate'2017 9,614,042'Heterojunction tunnel field effect transistor fabrication using limited lithography steps'2017 9,608,099'Nanowire semiconductor device'2017 9,601,385'Method of making a dual strained channel semiconductor device'2017 9,601,599'Aspect ratio for semiconductor on insulator'2017 9,601,476'Optoelectronics and CMOS integration on GOI substrate'2017 9,595,445'Floating body storage device employing a charge storage trench'2017 9,590,057'Reduced parasitic capacitance with slotted contact'2017 9,590,085'Method and structure for III-V FinFET'2017 9,577,096'Salicide formation on replacement metal gate finFet devices'2017 9,576,096'Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture'2017 9,570,554'Robust gate spacer for semiconductor devices'2017 9,570,449'Metal strap for DRAM/FinFET combination'2017 9,564,506'Low end parasitic capacitance FinFET'2017 9,564,526'Group III nitride integration with CMOS technology'2017 9,553,166'Asymmetric III-V MOSFET on silicon substrate'2017 9,553,107'Shallow extension junction'2017 9,548,358'Dual fill silicon-on-nothing field effect transistor'2017 9,548,421'Optoelectronic devices with back contact'2017 9,543,463'Signal distribution in integrated circuit using optical through silicon via'2017 9,536,832'Junctionless back end of the line via contact'2017 9,536,739'Self-cut sidewall image transfer process'2017 9,536,775'Aspect ratio for semiconductor on insulator'2017 9,530,665'Protective trench layer and gate spacer in finFET devices'2016 9,525,069'Structure and method to form a FinFET device'2016 9,515,070'Replacement metal gate'2016 9,515,165'III-V field effect transistor (FET) with reduced short channel leakage, integrated circuit (IC) chip and method of manufacture'2016 9,515,090'Method to form dual channel group III-V and Si/Ge FINFET CMOS and integrated circuit fabricated using the method'2016 9,508,833'Punch through stopper for semiconductor device'2016 9,502,500'Forming multi-stack nanowires using a common release material'2016 9,502,506'Structure for FinFET fins'2016 9,496,447'Signal distribution in integrated circuit using optical through silicon via'2016 9,496,399'FinFET devices with multiple channel lengths'2016 9,496,379'Method and structure for III-V FinFET'2016 9,484,250'Air gap contact formation for reducing parasitic capacitance'2016 9,478,708'Embedded galliumâ€”nitride in silicon'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2021Patents assigned to IBM (427)· patent assignee history

2001–2017Based in Wappingers Falls, NY, US· patent location history

2012–2019Patents assigned to LEOBANDUNG EFFENDI (17)· patent assignee history

2013–2015Patents assigned to BASKER VEERARAGHAVAN S (6)· patent assignee history

2013–2015Patents assigned to YAMASHITA TENKO (6)· patent assignee history

2013–2021Based in Stormville, NY, US· patent location history

2014–2015Based in Wappinger Falls, NY, US· patent location history

2015–2019Patents assigned to GLOBALFOUNDRIES INC (13)· patent assignee history

2017–2018Based in Stormvile, NY, US· patent location history

2018–2021Based in Yorktown Heights, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	427	2001–2021
LEOBANDUNG EFFENDIself	17	2012–2019
GLOBALFOUNDRIES INC	13	2015–2019
BASKER VEERARAGHAVAN S	6	2013–2015
YAMASHITA TENKO	6	2013–2015

Locations

Location	Patents	Span
Stormville, New York, US	353	2013–2021
Wappingers Falls, New York, US	76	2001–2017
Yorktown Heights, New York, US	5	2018–2021
Wappinger Falls, New York, US	5	2014–2015
Stormvile, New York, US	2	2017–2018