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Inventor

Hyunjun Sim

Inventor
Hwaseong-si, KR

Overview

5→
Patents
2010–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices33%
H10NElectric solid-state devices not otherwise provided for25%
G11CStatic stores17%
H01LSemiconductor devices17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
PatentTitleYear
9,960,182Three-dimensional semiconductor memory device and method of fabricating the same20188,581,346'Semiconductor memory device'20138,338,224'Resistance-type random access memory device having three-dimensional bit line and word line patterning'20128,331,152'Nonvolatile memory device'20127,772,067'Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (5)· patent assignee history
2010–2012Based in Gyeonggi-do, KR· patent location history
2012–2013Patents assigned to BAEK INGYU (3)· patent assignee history
2012–2013Patents assigned to PARK MINYOUNG (3)· patent assignee history
2012–2013Patents assigned to SIM HYUNJUN (3)· patent assignee history
2012–2013Patents assigned to YOON HONGSIK (3)· patent assignee history
2012–2018Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD52010–2018
BAEK INGYU32012–2013
PARK MINYOUNG32012–2013
SIM HYUNJUNself32012–2013
YOON HONGSIK32012–2013
Locations
LocationPatentsSpan
Hwaseong-si, KR32012–2018
Gyeonggi-do, KR22010–2012