LexDanaLexDanabeta
Inventor

Yoshihisa Nagano

Inventor
Osaka, JP

Overview

58→
Patents
1995–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices38%
H10BElectronic memory devices29%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C23CCoating metallic material2%
B25JManipulators2%
G11CStatic stores2%
B23PMetal-working not otherwise provided for1%
G05BControl or regulating systems in general1%
PatentTitleYear
8,954,182'Robot system'20158,887,893'Work system'2014RE041625'Semiconductor device and method of fabricating the same'20107,791,119'Electro-resistance element and electro-resistance memory using the same'20107,781,230'Electro-resistance element, electro-resistance memory using the same and method of manufacturing the same'20107,776,707'Method for manufacturing dielectric memory'20107,531,863'Semiconductor device and method of fabricating the same'2009RE040602'Semiconductor device having a ferroelectric TFT and a dummy element'20087,420,237'Capacitor element'20087,221,013'Semiconductor device'20077,132,709'Semiconductor device including a capacitor having a capacitive insulating film of an insulating metal oxide'20067,053,436'Semiconductor device and method for fabricating the same'20067,015,564'Capacitive element and semiconductor memory device'20066,939,725'Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film'20056,849,887'Semiconductor device and method for fabricating the same'20056,847,074'Semiconductor memory device'20056,818,498'Capacitance element and method of manufacturing the same'20046,809,000'Semiconductor device and method for fabricating the same'20046,781,179'Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film'20046,756,282'Semiconductor device and method of fabricating the same'20046,737,697'Semiconductor device and method and system for fabricating the same'20046,730,951'Capacitor, semiconductor memory device, and method for manufacturing the same'20046,573,111'Method of making a semiconductor device with capacitor element'20036,562,677'Capacitance element and method of manufacturing the same'20036,528,365'Semiconductor memory device and method for manufacturing the same'20036,528,327'Method for fabricating semiconductor memory device having a capacitor'20036,468,875'Fabrication method of capacitor for integrated circuit'20026,448,598'Semiconductor memory'20026,441,420'Semiconductor device and method of fabricating the same'20026,333,528'Semiconductor device having a capacitor exhibiting improved moisture resistance'20016,326,671'Semiconductor memory device and method for manufacturing the same'20016,320,214'Semiconductor device having a ferroelectric TFT and a dummy element'20016,294,438'Semiconductor device having capacitor and manufacturing method thereof'20016,239,462'Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same'20016,232,131'Method for manufacturing semiconductor device with ferroelectric capacitors including multiple annealing steps'20016,214,660'Capacitor for integrated circuit and its fabrication method'20016,204,111'Fabrication method of capacitor for integrated circuit'20016,174,822'Semiconductor device and method for fabricating the same'20016,169,304'Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer'20016,166,424'Capacitance structure for preventing degradation of the insulating film'20006,143,597'Method of manufacturing capacitor included in semiconductor device and the capacitor thereof'20006,107,657'Semiconductor device having capacitor and manufacturing method thereof'20006,100,100'Method for manufacturing capacitor element'20006,046,490'Semiconductor device having a capacitor dielectric element and wiring layers'20006,046,467'Semiconductor device having capacitor'20006,015,987'Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof'20005,929,475'Capacitor for integrated circuit and its fabrication method'19995,840,200'Method of manufacturing semiconductor devices'19985,837,591'Method of manufacturing a semiconductor device'19985,795,794'Method for forming a semiconductor device having a capacitor'19985,780,351'Semiconductor device having capacitor and manufacturing method thereof'19985,652,171'Method of manufacturing semiconductor device having capacitor'19975,627,391'Semiconductor device and method of manufacturing the same'19975,624,864'Semiconductor device having capacitor and manufacturing method thereof'19975,599,424'Method of manufacturing semiconductor devices'19975,591,663'Method of manufacturing ferroelectric capacitor with a hydrogen heat treatment'19975,527,729'Method of manufacturing a capacitor having metal electrodes'19965,430,671'Semiconductor memory device'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2009Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (27)· patent assignee history
1996–2003Patents assigned to MATSUSHITA ELECTRONICS CORP (22)· patent assignee history
1996–2006Based in Suita, JP· patent location history
1997–2010Based in Osaka, JP· patent location history
2008–2010Patents assigned to PANASONIC CORP (5)· patent assignee history
2008Based in Jyoetsu, JP· patent location history
2010Based in Niigata, JP· patent location history
2014–2015Patents assigned to NAGANO YOSHIHISA (2)· patent assignee history
2014–2015Patents assigned to YASKAWA DENKI SEISAKUSHO KK (2)· patent assignee history
2014–2015Based in Kitakyushu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD271995–2009
MATSUSHITA ELECTRONICS CORP221996–2003
PANASONIC CORP52008–2010
NAGANO YOSHIHISAself22014–2015
YASKAWA DENKI SEISAKUSHO KK22014–2015
Locations
LocationPatentsSpan
Osaka, JP291997–2010
Suita, JP241996–2006
Kitakyushu, JP22014–2015
Niigata, JP12010
Jyoetsu, JP12008