Inventor
Katsuhisa Yuda
Inventor
Tokyo, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material25%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01JElectric discharge tubes or discharge lamps10%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
B23KSoldering or unsoldering6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
PatentTitleYear
7,981,216'Vacuum processing apparatus'20117,709,063'Remote plasma apparatus for processing substrate with two types of gases'20107,585,708'Method for manufacturing a thin-film transistor'20097,392,759'Remote plasma apparatus for processing substrate with two types of gases'20087,119,363'Thin film transistor formed on a transparent substrate'20067,067,436'Method of forming silicon oxide film and forming apparatus thereof'20066,851,384'Remote plasma apparatus for processing substrate with two types of gases'20056,830,786'Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film'20046,822,263'Thin film transistor formed on a transparent substrate'20046,779,483'Plasma CVD apparatus for large area CVD film'20046,703,267'Method of manufacturing thin film transistor'20046,663,715'Plasma CVD apparatus for large area CVD film'20036,537,911'Chemical vapor deposition method'20036,444,508'Method of manufacturing thin film transistor'20026,444,327'Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film'20026,436,487'Method for depositing a silicon oxide film'20026,383,299'Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film'20026,281,053'Thin film transistor with reduced hydrogen passivation process time'20016,258,638'Method of manufacturing thin film transistor'20016,118,139'Thin film transistor with reduced hydrogen passivation process time'20005,998,838'Thin film transistor'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2011Patents assigned to NEC CORP (20)· patent assignee history
1999–2011Based in Tokyo, JP· patent location history
2002–2006Patents assigned to ANELVA CORP (6)· patent assignee history
2008–2011Patents assigned to CANON ANELVA CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 20 | 1999–2011 |
| ANELVA CORP | 6 | 2002–2006 |
| CANON ANELVA CORP | 3 | 2008–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 21 | 1999–2011 |