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Inventor

Tianniu Chen

Inventor
Rocky Hill, CT, US

Overview

49→
Patents
2005–2020
Patent span
Chemistry
Primary field (CPC C)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium14%
C23CCoating metallic material12%
H01LSemiconductor devices8%
C07CAcyclic or carbocyclic compounds7%
H10NElectric solid-state devices not otherwise provided for6%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
C11DDetergent compositions3%
H10DInorganic electric semiconductor devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,711,227TiN hard mask and etch residue removal202010,400,167Etching compositions and methods for using same201910,332,784Selectively removing titanium nitride hard mask and etch residue removal201910,301,580Stripping compositions having high WN/W etching selectivity201910,072,237Photoresist cleaning composition used in photolithography and a method for treating substrate therewith20189,976,037Composition for treating surface of substrate, method and device20189,976,111TiN hard mask and etch residual removal20189,873,833Etchant solutions and method of use thereof20189,831,088Composition and process for selectively etching metal nitrides20179,783,558'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20179,731,368'Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment'20179,649,712'Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment'20179,534,285'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20179,537,095'Tellurium compounds useful for deposition of tellurium containing materials'20179,472,420'Composition for titanium nitride hard mask and etch residue removal'20169,222,018'Titanium nitride hard mask and etch residue removal'20159,221,114'Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment'20159,219,232'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20159,102,693'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20159,074,169'Lithographic tool in situ clean formulations'20159,034,688'Antimony compounds useful for deposition of antimony-containing materials'20158,877,549'Low temperature deposition of phase change memory materials'20148,802,882'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20148,796,068'Tellurium compounds useful for deposition of tellurium containing materials'20148,784,936'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20148,709,863'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20148,679,894'Low temperature deposition of phase change memory materials'20148,674,127'Antimony compounds useful for deposition of antimony-containing materials'20148,524,931'Precursor compositions for ALD/CVD of group II ruthenate thin films'20138,288,198'Low temperature deposition of phase change memory materials'20128,268,665'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20128,206,784'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20128,168,811'Precursors for CVD/ALD of metal-containing films'20128,093,140'Amorphous Ge/Te deposition process'20128,053,375'Super-dry reagent compositions for formation of ultra low k films'20118,008,117'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20117,964,746'Copper precursors for CVD/ALD/digital CVD of copper metal films'20117,858,816'Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films'20107,838,329'Antimony and germanium complexes useful for CVD/ALD of metal thin films'20107,838,073'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20107,781,605'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20107,750,173'Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films'20107,709,384'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20107,638,074'Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films'20097,601,860'Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films'20097,423,166'Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films'20087,371,878'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20087,198,815'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'20076,960,675'Tantalum amide complexes for depositing tantalum-containing films, and method of making same'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2017Patents assigned to ADVANCED TECH MATERIALS (32)· patent assignee history
2005–2017Based in Rocky Hill, CT, US· patent location history
2012–2017Patents assigned to CHEN TIANNIU (13)· patent assignee history
2012–2014Patents assigned to XU CHONGYING (10)· patent assignee history
2012–2014Patents assigned to ROEDER JEFFREY F (8)· patent assignee history
2015–2017Patents assigned to ENTEGRIS INC (9)· patent assignee history
2015–2020Based in Westford, MA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ADVANCED TECH MATERIALS322005–2017
CHEN TIANNIUself132012–2017
XU CHONGYING102012–2014
ENTEGRIS INC92015–2017
ROEDER JEFFREY F82012–2014
Locations
LocationPatentsSpan
Rocky Hill, CT, US312005–2017
Westford, Massachusetts, US182015–2020