Inventor
Hyoung-soo Ko
Inventor
Seoul, KR
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer19%
B82YSpecific uses or applications of nanostructures15%
G01QScanning-probe techniques or apparatus8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10TTechnical subjects covered by former us classification5%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10DInorganic electric semiconductor devices4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
B29CShaping or joining of plastics4%
H04NPictorial communication, e.g. television4%
PatentTitleYear
9,118,856'Sensor, data processing system, and operating method'20159,103,722'Unit pixels, depth sensors and three-dimensional image sensors including the same'20159,029,785'Method of fabricating microlens, and depth sensor including microlens'20158,920,153'Apparatus comprising substrate and conductive layer'20148,901,498'Unit pixels, depth sensors and three-dimensional image sensors including the same'20148,785,982'Pixel for depth sensor and image sensor including the pixel'20148,523,555'Apparatus comprising substrate and conductive layer'20138,432,001'Electric field information reading head, electric field information writing/reading head and fabrication methods thereof and information storage device using the same'20138,349,527'Conductive layer including implanted metal ions'20138,304,808'Electric field read/write head'20128,248,906'Ferroelectric hard disk system'20128,107,354'Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head'20128,064,324'Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the same'20117,994,499'Semiconductor probe having wedge shape resistive tip and method of fabricating the same'20117,968,253'Nano imprint master and method of manufacturing the same'20117,933,190'Electric field read/write device and method of driving the same'20117,915,109'Semiconductor probe structure using impact-ionization metal oxide semiconductor device, information storing device therewith and manufacturing method thereof'20117,911,928'High density data storage device and data recording or reproduction method using the same'20117,889,628'Ferroelectric recording medium and writing method for the same'20117,885,169'Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same'20117,885,170'Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same'20117,852,738'Method of improving sensitivity of electric field sensor, storage apparatus including electric field sensor, and method of reproducing information of the storage apparatus'20107,820,311'Ferroelectric recording medium and writing method for the same'20107,808,025'Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head'20107,759,153'Method of fabricating electric field sensor having electric field shield'20107,759,954'Semiconductor probe having resistive tip and method of fabricating the same'20107,733,761'Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same'20107,700,393'Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the same'20107,687,838'Resistive memory device having array of probes and method of manufacturing the resistive memory device'20107,659,562'Electric field read/write head and method of manufacturing same and data read/write device'20107,605,014'Method of fabricating resistive probe having self-aligned metal shield'20097,529,119'Magnetic logic device and methods of manufacturing and operating the same'20097,528,371'Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same'20097,464,584'Semiconductor probe and method of writing and reading information using the same'20087,419,843'Method of manufacturing semiconductor probe having resistive tip'20087,411,210'Semiconductor probe with resistive tip having metal shield thereon'20087,319,224'Semiconductor probe with resistive tip and method of fabricating the same'20086,188,129'Stacked semiconductor chip package having external terminal pads and stackable chips having a protection layer'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2014Based in Seoul, KR· patent location history
2008–2015Patents assigned to SAMSUNG ELECTRONICS CO LTD (31)· patent assignee history
2010–2013Based in Yongin-si, KR· patent location history
2011–2015Patents assigned to KO HYOUNG-SOO (9)· patent assignee history
2011–2013Patents assigned to HONG SEUNG-BUM (7)· patent assignee history
2012–2015Patents assigned to JUNG JU-HWAN (6)· patent assignee history
2012–2014Patents assigned to SEAGATE TECHNOLOGY LLC (4)· patent assignee history
2014–2015Based in Hwaseong-si, KR· patent location history
2014Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 31 | 2008–2015 |
| KO HYOUNG-SOOself | 9 | 2011–2015 |
| HONG SEUNG-BUM | 7 | 2011–2013 |
| JUNG JU-HWAN | 6 | 2012–2015 |
| SEAGATE TECHNOLOGY LLC | 4 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 30 | 2001–2014 |
| Hwaseong-si, KR | 4 | 2014–2015 |
| Yongin-si, KR | 3 | 2010–2013 |
| Gyeonggi-do, KR | 1 | 2014 |