Inventor
Mark R. Teepe
Inventor
Menlo Park, CA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light25%
H10HInorganic light-emitting semiconductor devices having potential barriers23%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10DInorganic electric semiconductor devices6%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
H01LSemiconductor devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B01LChemical or physical laboratory apparatus for general use2%
B81BMicrostructural devices or systems, e.g. micromechanical devices2%
PatentTitleYear
10,895,566Optical monitoring to detect corrosion of power grid components202110,277,005Pumped edge emitters with metallic coatings20199,124,062'Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector'20159,099,344'Fabrication for electroplating thick metal pads'20158,964,796'Structure for electron-beam pumped edge-emitting device and methods for producing same'20158,822,314'Method of growing epitaxial layers on a substrate'20148,330,144'Semi-polar nitride-based light emitting structure and method of forming same'20128,247,249'Semi-polar nitride-based light emitting structure and method of forming same'20128,154,009'Light emitting structure including high-al content MQWH'20128,143,154'Relaxed InGaN/AlGaN templates'20128,143,647'Relaxed InGaN/AlGaN templates'20128,088,637'Method of manufacturing a semiconductor device including a superlattice strain relief layer'20127,858,521'Fabrication for electroplating thick metal pads'20107,812,421'Light emitting devices with an electrically active top reflector contact'20107,714,340'Nitride light-emitting device'20107,547,925'Superlattice strain relief layer for semiconductor devices'20097,501,299'Method for controlling the structure and surface qualities of a thin film and product produced thereby'20097,087,444'Method for integration of microelectronic components with microfluidic devices'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2021Patents assigned to PALO ALTO RES CT INC (17)· patent assignee history
2006–2021Based in Menlo Park, CA, US· patent location history
2012–2014Patents assigned to YANG ZHIHONG (7)· patent assignee history
2012–2014Patents assigned to CHUA CHRISTOPHER L (5)· patent assignee history
2012–2015Patents assigned to TEEPE MARK R (5)· patent assignee history
2012–2015Patents assigned to JOHNSON NOBLE M (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PALO ALTO RES CT INC | 17 | 2006–2021 |
| YANG ZHIHONG | 7 | 2012–2014 |
| CHUA CHRISTOPHER L | 5 | 2012–2014 |
| TEEPE MARK Rself | 5 | 2012–2015 |
| JOHNSON NOBLE M | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Menlo Park, California, US | 18 | 2006–2021 |