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Inventor

Masumi Saitoh

Inventor
Yokkaichi, JP

Overview

71→
Patents
2009–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices26%
H10BElectronic memory devices23%
H10DInorganic electric semiconductor devices17%
H10NElectric solid-state devices not otherwise provided for15%
G11CStatic stores9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
B82YSpecific uses or applications of nanostructures2%
G01QScanning-probe techniques or apparatus0%
G06FElectric digital data processing0%
PatentTitleYear
11,125,775Probe and manufacturing method of probe for scanning probe microscope202111,114,503Memory device202110,949,132Semiconductor storage device202110,930,847Memory device202110,923,486Memory device202110,840,446Memory device202010,832,742Semiconductor storage device202010,784,312Semiconductor memory device202010,762,956Semiconductor memory device202010,692,934Memory device202010,685,709Nonvolatile semiconductor memory with gate insulation layer of a transistor including ferroelectric material202010,644,068Memory device202010,608,009Peripheral structure for NAND flash memory device202010,446,749Memory device201910,438,801Semiconductor memory device201910,418,551Semiconductor memory device201910,347,650Semiconductor memory device201910,312,289Semiconductor memory device201910,312,440Variable resistance element and memory device201910,256,404Memory device201910,256,401Memory device with multiple interconnect lines201910,249,818Memory element201910,164,180Variable resistance element and memory device201810,147,874Memory device201810,128,316Semiconductor memory device201810,103,328Nonvolatile memory device201810,050,087Semiconductor memory device201810,043,864Thin film semiconductor device201810,038,032Semiconductor memory device, semiconductor device, and method for manufacturing the same20189,997,569Memory device20189,997,496Semiconductor integrated circuit20189,985,136Semiconductor device20189,929,166'Semiconductor device'20189,842,990'Semiconductor memory device and method for manufacturing the same'20179,825,096'Resistance change memory, method of manufacturing resistance change memory, and FET'20179,818,757'Semiconductor device'20179,805,927'Nonvolatile semiconductor memory device'20179,786,683'Nonvolatile semiconductor memory device and method of manufacturing the same'20179,761,798'Storage device'20179,755,055'Semiconductor device and method for manufacturing the same'20179,735,201'Memory device'20179,685,462'Semiconductor device and method of manufacturing the same'20179,614,103'Semiconductor device and method for manufacturing the same'20179,548,085'Semiconductor memory device'20179,530,891'Semiconductor device and method of manufacturing the same'20169,502,431'Nonvolatile semiconductor memory device and method of manufacturing the same'20169,412,937'Memory device'20169,355,908'Semiconductor pillar transistors having channels with different crystal orientations'20169,318,532'Semiconductor memory device'20169,275,729'Semiconductor memory device'20169,202,845'Memory device having a stacked variable resistance layer'20159,203,023'Semiconductor memory device and a method of manufacturing the same'20159,196,629'Non-volatile semiconductor memory device having carbon doped columnar semiconductor layer'20159,190,454'Memory device'20159,111,965'Semiconductor device and method of manufacturing the same'20159,087,715'Nonvolatile semiconductor memory device and method of manufacturing the same'20159,082,973'Resistance random access memory device'20158,999,801'Nanowire channel field effect device and method for manufacturing the same'20158,994,087'Semiconductor device and method for manufacturing the same'20158,932,915'Semiconductor device and method for manufacturing the same'20158,907,406'Transistor having impurity distribution controlled substrate and method of manufacturing the same'20148,710,485'Semiconductor device and method of manufacturing the same'20148,518,769'Semiconductor device and method of manufacturing the same'20138,492,219'Semiconductor device manufacturing method'20138,467,241'Semiconductor memory device'20138,399,926'Semiconductor device and manufacturing method of same'20138,076,231'Semiconductor device and manufacturing method of same'20118,053,758'Semiconductor device'20118,039,887'Non-volatile semiconductor storage device and method for manufacturing the same'20117,737,486'Non-volatile semiconductor storage device and method for manufacturing the same'20107,605,422'Semiconductor device'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2018Patents assigned to TOSHIBA KK (33)· patent assignee history
2009–2021Based in Kanagawa, JP· patent location history
2010–2021Based in Yokohama, JP· patent location history
2011–2015Patents assigned to SAITOH MASUMI (10)· patent assignee history
2013–2015Patents assigned to NUMATA TOSHINORI (6)· patent assignee history
2013–2015Patents assigned to NAKABAYASHI YUKIO (3)· patent assignee history
2015–2021Based in Yokkaichi, JP· patent location history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (36)· patent assignee history
2018–2020Based in Mie, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA MEMORY CORP362017–2021
TOSHIBA KK332009–2018
SAITOH MASUMIself102011–2015
NUMATA TOSHINORI62013–2015
NAKABAYASHI YUKIO32013–2015
Locations
LocationPatentsSpan
Yokkaichi, JP392015–2021
Yokohama, JP152010–2021
Kanagawa, JP142009–2021
Mie, JP22018–2020