Inventor
Hsing-Huang Tseng
Inventor
Austin, TX, US
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices44%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01LSemiconductor devices6%
H10BElectronic memory devices4%
C23CCoating metallic material3%
PatentTitleYear
11,049,813Interconnection structure, fabricating method thereof, and semiconductor device using the same202111,018,131Semiconductor device and fabricating method thereof202111,018,019Semiconductor structure and manufacturing method thereof202111,018,261Fin field effect transistor20217,704,821'In-situ nitridation of high-k dielectrics'20107,402,472'Method of making a nitrided gate dielectric'20087,235,502'Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors'20077,214,590'Method of forming an electronic device'20077,144,825'Multi-layer dielectric containing diffusion barrier material'20067,015,153'Method for forming a layer using a purging gas in a semiconductor process'20067,001,852'Method of making a high quality thin dielectric layer'20066,902,969'Process for forming dual metal gate structures'20056,884,685'Radical oxidation and/or nitridation during metal oxide layer deposition process'20056,787,421'Method for forming a dual gate oxide device using a metal oxide and resulting device'20046,717,226'Transistor with layered high-K gate dielectric and method therefor'20046,686,282'Plated metal transistor gate and method of formation'20046,297,173'Process for forming a semiconductor device'20016,146,948'Method for manufacturing a thin oxide for use in semiconductor integrated circuits'20006,063,698'Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits'20005,972,804'Process for forming a semiconductor device'19995,960,289'Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region'19995,830,802'Process for reducing halogen concentration in a material layer during semiconductor device fabrication'19985,731,238'Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same'19985,726,087'Method of formation of semiconductor gate dielectric'19985,712,208'Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants'19985,712,177'Method for forming a reverse dielectric stack'19985,707,889'Process for forming field isolation'19985,580,815'Process for forming field isolation and a structure over a semiconductor substrate'19965,571,734'Method for forming a fluorinated nitrogen containing dielectric'19965,552,332'Process for fabricating a MOSFET device having reduced reverse short channel effects'19965,464,792'Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device'19955,436,488'Trench isolator structure in an integrated circuit'19955,387,540'Method of forming trench isolation structure in an integrated circuit'19955,371,026'Method for fabricating paired MOS transistors having a current-gain differential'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2004Patents assigned to MOTOROLA INC (20)· patent assignee history
1994–2010Based in Austin, TX, US· patent location history
2004–2010Patents assigned to FREESCALE SEMICONDUCTOR INC (10)· patent assignee history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2021Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 20 | 1994–2004 |
| FREESCALE SEMICONDUCTOR INC | 10 | 2004–2010 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Austin, Texas, US | 30 | 1994–2010 |
| Hsinchu, TW | 4 | 2021 |