Inventor
Mihir Mudholkar
Inventor
Tempe, AZ, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices38%
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H03KPulse technique2%
PatentTitleYear
10,923,604Termination structure for insulated gate semiconductor device and method202110,847,659Termination structure for insulated gate semiconductor device and method202010,847,660Trench semiconductor device having multiple active trench depths and method202010,797,182Trench semiconductor device having shaped gate dielectric and gate electrode structures and method202010,700,219Method of manufacturing a semiconductor component202010,608,122Schottky device and method of manufacture202010,593,760Method for forming trench semiconductor device having Schottky barrier structure202010,566,466Termination structure for insulated gate semiconductor device and method202010,439,075Termination structure for insulated gate semiconductor device and method201910,431,699Trench semiconductor device having multiple active trench depths and method201910,388,801Trench semiconductor device having shaped gate dielectric and gate electrode structures and method201910,211,060Semiconductor device and manufacturing method thereof201910,177,232Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles20199,905,500'Semiconductor component and method of manufacture'20189,859,449'Method of forming trench semiconductor device having multiple trench depths'20189,773,895'Half-bridge HEMT circuit and an electronic package including the circuit'20179,716,151'Schottky device having conductive trenches and a multi-concentration doping profile therebetween'20179,716,187'Trench semiconductor device having multiple trench depths and method'20179,647,080'Schottky device and method of manufacture'20179,552,993'Semiconductor device and manufacturing method thereof'20179,478,426'Semiconductor device and manufacturing method thereof'20169,263,598'Schottky device and method of manufacture'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2021Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (21)· patent assignee history
2016Patents assigned to SEMICONDUCTOR COMPONENTS IND (1)· patent assignee history
2016–2020Based in Tempe, AZ, US· patent location history
2020Patents assigned to SEMICONDUTOR COMPONENTS IND LLC (1)· patent assignee history
2020–2021Based in Phoenix, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR COMPONENTS IND LLC | 21 | 2016–2021 |
| SEMICONDUCTOR COMPONENTS IND | 1 | 2016 |
| SEMICONDUTOR COMPONENTS IND LLC | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tempe, AZ, US | 20 | 2016–2020 |
| Phoenix, AZ, US | 2 | 2020–2021 |