Inventor
Amos Fenigstein
Inventor
Haifa, IL
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation20%
H04NPictorial communication, e.g. television18%
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices12%
G11CStatic stores8%
H10BElectronic memory devices8%
B82YSpecific uses or applications of nanostructures3%
G01TMeasurement of nuclear or x-radiation3%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%
G01SRadio direction-finding2%
PatentTitleYear
10,852,399Active quenching for single-photon avalanche diode using one- shot circuit202010,757,355Image sensor module and a method for sensing202010,210,526Image sensor module and a method for evaluating an image sensor20199,935,618Schmitt trigger circuit with hysteresis determined by modified polysilicon gate dopants20189,865,640'Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS'20189,865,632'Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate'20189,741,817'Method for manufacturing a trench metal insulator metal capacitor'20179,729,808'Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier'20179,729,810'Image sensor pixel with memory node having buried channel and diode portions'20179,431,455'Back-end processing using low-moisture content oxide cap layer'20169,356,169'Apparatus, system and method of back side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) pixel array'20169,210,345'Shared readout low noise global shutter image sensor method'20159,160,956'Shared readout low noise global shutter image sensor'20159,106,851'Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier'20158,779,543'Device having an avalanche photo diode and a method for sensing photons'20148,722,484'High-K dielectric stack and method of fabricating same'20148,501,573'High-resolution integrated X-ray CMOS image sensor'20138,279,328'CMOS image sensor with wide (intra-scene) dynamic range'20128,203,111'CMOS image sensor pixel with an NMOS charge amplifier'20128,089,035'CMOS image sensor with high sensitivity wide dynamic range pixel for high resolution applications'20127,754,564'Method for fabricating three-dimensional control-gate architecture for single poly EPROM memory devices in planar CMOS technology'20107,754,559'Method for fabricating capacitor structures using the first contact metal'20107,678,603'Via wave guide with curved light concentrator for image sensing devices'20107,671,396'Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology'20107,608,837'High resolution integrated X-ray CMOS image sensor'20097,482,233'Embedded non-volatile memory cell with charge-trapping sidewall spacers'20097,400,538'NROM memory device with enhanced endurance'20087,358,583'Via wave guide with curved light concentrator for image sensing devices'20087,227,234'Embedded non-volatile memory cell with charge-trapping sidewall spacers'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to TOWER SEMICONDUCTOR LTD (28)· patent assignee history
2007–2020Based in Haifa, IL· patent location history
2008–2014Based in Migdal Haemek, IL· patent location history
2012–2014Patents assigned to FENIGSTEIN AMOS (6)· patent assignee history
2012Patents assigned to LAHAV ASSAF (2)· patent assignee history
2012–2014Patents assigned to LEITNER TOMER (2)· patent assignee history
2013–2014Patents assigned to HEIMAN ALEXEY (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOWER SEMICONDUCTOR LTD | 28 | 2007–2020 |
| FENIGSTEIN AMOSself | 6 | 2012–2014 |
| HEIMAN ALEXEY | 2 | 2013–2014 |
| LAHAV ASSAF | 2 | 2012 |
| LEITNER TOMER | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Haifa, IL | 22 | 2007–2020 |
| Migdal Haemek, IL | 7 | 2008–2014 |