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Inventor

Yuichi Oshima

Inventor
Tsuchiura, JP

Overview

30→
Patents
2001–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
H10DInorganic electric semiconductor devices7%
C23CCoating metallic material4%
H01LSemiconductor devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
A61KPreparations for medical, dental or toiletry purposes2%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations2%
A63BApparatus for physical training, gymnastics, swimming, climbing, or fencing2%
PatentTitleYear
10,460,934Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film201910,060,047Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate20189,246,049'Nitride-based semiconductor substrate and semiconductor device'20168,975,230'Method of treating ischemic injury with follistatin-like 1 polypeptide'20158,829,651'Nitride-based semiconductor substrate and semiconductor device'20148,786,052'Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate'20148,715,413'Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate'20148,690,636'Compound semiconductor substrate production method'20148,624,356'Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate'20148,592,316'Nitride semiconductor substrate, production method therefor and nitride semiconductor device'20138,329,650'Method of treating ischemic injury with follistatin-like 1 polypeptide'20128,143,702'Group III-V nitride based semiconductor substrate and method of making same'20128,101,939'GaN single-crystal substrate and method for producing GaN single crystal'20127,906,412'Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate'20117,829,913'Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method'2010RE041805'Moisture curable composition'20107,791,103'Group III nitride semiconductor substrate'20107,728,323'Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting device'20107,662,488'Nitride-based semiconductor substrate and method of making the same'20107,589,345'Nitride-based compound semiconductor substrate and method for fabricating the same'20097,348,278'Method of making nitride-based compound semiconductor crystal and substrate'20087,271,404'Group III-V nitride-based semiconductor substrate and method of making same'20077,196,399'Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density'20077,189,588'Group III nitride semiconductor substrate and its manufacturing method'20077,118,934'Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate'20067,097,920'Group III nitride based semiconductor substrate and process for manufacture thereof'20067,075,111'Nitride semiconductor substrate and its production method'20066,924,159'Semiconductor substrate made of group III nitride, and process for manufacture thereof'20056,812,051'Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure'20046,306,966'Moisture curable composition'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2010Patents assigned to CEMEDINE CO LTD (2)· patent assignee history
2001–2010Based in Tokyo, JP· patent location history
2004–2014Patents assigned to HITACHI CABLE (20)· patent assignee history
2004–2010Patents assigned to NEC CORP (2)· patent assignee history
2004–2018Based in Tsuchiura, JP· patent location history
2005–2019Based in Ibaraki, JP· patent location history
2012–2016Patents assigned to OSHIMA YUICHI (10)· patent assignee history
2012Based in Brookline, MA, US· patent location history
2014Patents assigned to HITACHI METALS LTD (3)· patent assignee history
2015Based in Toyonaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI CABLE202004–2014
OSHIMA YUICHIself102012–2016
HITACHI METALS LTD32014
CEMEDINE CO LTD22001–2010
NEC CORP22004–2010
Locations
LocationPatentsSpan
Tsuchiura, JP182004–2018
Tokyo, JP52001–2010
Ibaraki, JP42005–2019
Toyonaka, JP12015
Brookline, Massachusetts, US12012