Inventor
Kohji Kanamori
Inventor
Seoul, KR
Overview
Patents· 63 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices31%
H10DInorganic electric semiconductor devices22%
H01LSemiconductor devices15%
G11CStatic stores11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
G01RMeasuring electric variables1%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein1%
G06FElectric digital data processing1%
PatentTitleYear
11,017,225Image synthesizing apparatus, iris authentication system, image synthesizing method, and iris authenticating method202110,861,874Vertical semiconductor devices202010,854,630Semiconductor device including vertical channel layer202010,854,632Vertical memory devices and methods of manufacturing the same202010,818,689Three-dimensional semiconductor memory device and method of fabricating the same202010,763,167Vertical semiconductor devices and method of manufacturing the same202010,748,923Vertical memory devices and methods of manufacturing the same202010,714,495Three-dimensional semiconductor memory devices including through-interconnection structures202010,707,231Semiconductor memory device having vertical supporter penetrating the gate stack structure and through dielectric pattern202010,680,011Vertical semiconductor devices202010,600,804Vertical memory devices202010,566,345Three-dimensional semiconductor memory device202010,559,591Vertical memory devices and methods of manufacturing the same202010,522,562Memory device201910,453,859Methods of manufacturing vertical memory devices201910,411,033Semiconductor device including vertical channel layer201910,396,092Vertical memory device and method of manufacturing the same201910,367,003Vertical non-volatile memory device and method for fabricating the same201910,134,752Memory device201810,068,917Vertical memory devices and methods of manufacturing the same20189,997,534Vertical memory devices20189,960,171Semiconductor devices including charge storage patterns20189,634,024'Semiconductor device having vertical channel and air gap, and method of manufacturing thereof'20179,378,816'Variable resistance memory devices and erase verifying methods thereof'20169,299,707'Three-dimensional semiconductor devices with current path selection structure'20169,224,429'Three-dimensional semiconductor devices and methods of fabricating the same'20159,183,893'Semiconductor memory device'20159,019,739'Three-dimensional semiconductor devices and methods of fabricating the same'20158,716,866'Semiconductor device'20148,039,940'Semiconductor storage device, semiconductor device, and manufacturing method therefor'20118,008,705'Semiconductor storage device and method of manufacturing same'20117,880,214'Nonvolatile semiconductor device'20117,790,579'Semiconductor storage device, semiconductor device, and manufacturing method therefor'20107,692,237'Semiconductor memory device'20107,671,399'Semiconductor storage device'20107,619,278'Semiconductor memory device'20097,592,221'Semiconductor memory device and manufacturing method thereof'20097,580,293'Semiconductor memory device'20097,453,117'Non-volatile semiconductor memory device'20087,439,602'Semiconductor device and its manufacturing method'20087,411,838'Semiconductor memory device'20087,327,019'Semiconductor device of a charge storage type'20087,268,385'Semiconductor memory device'20077,138,817'Method and apparatus for testing defective portion of semiconductor device'20067,116,581'Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device'20067,098,104'Method of fabricating semiconductor memory device'20067,064,382'Nonvolatile memory and nonvolatile memory manufacturing method'20066,869,849'Semiconductor device and its manufacturing method'20056,747,321'Semiconductor memory device with a silicide layer formed on regions other than source regions'20046,436,769'Split gate flash memory with virtual ground array structure and method of fabricating the same'20026,426,257'Flash memory and manufacturing method therefor'20026,414,346'Semiconductor memory and manufacturing method thereof'20026,359,303'Split gate flash memory with virtual ground array structure and method of fabricating the same'20026,339,242'Semiconductor device lacking steeply rising structures and fabrication method of the same'20026,317,360'Flash memory and methods of writing and erasing the same as well as a method of forming the same'20016,201,274'Semiconductor device with no step between well regions'20016,172,393'Nonvolatile memory having contactless array structure which can reserve sufficient on current, without increasing resistance, even if width of bit line is reduced and creation of hyperfine structure is tried, and method of manufacturing nonvolatile memory'20016,165,847'Nonvolatile semiconductor memory device and method for manufacturing the same'20006,151,254'Non-volatile semiconductor memory device and data erase method of non-volatile semiconductor memory device'20006,010,946'Semiconductor device with isolation insulating film tapered and method of manufacturing the same'20005,863,822'Method of making non-volatile semiconductor memory devices having large capacitance between floating and control gates'19995,838,611'Nonvolatile semiconductor device and method of manufacturing same'19985,592,002'Non-volatile semiconductor memory device having reduced current consumption'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2006Patents assigned to NEC CORP (15)· patent assignee history
1997–2008Based in Tokyo, JP· patent location history
2004–2010Patents assigned to NEC ELECTRONICS CORP (16)· patent assignee history
2006–2014Based in Kanagawa, JP· patent location history
2006–2011Based in Kawasaki, JP· patent location history
2014–2019Patents assigned to KANAMORI KOHJI (9)· patent assignee history
2015–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (27)· patent assignee history
2015–2018Patents assigned to PARK YOUNGWOO (5)· patent assignee history
2015–2020Based in Seoul, KR· patent location history
2020Based in Seongnam-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 27 | 2015–2020 |
| NEC ELECTRONICS CORP | 16 | 2004–2010 |
| NEC CORP | 15 | 1997–2006 |
| KANAMORI KOHJIself | 9 | 2014–2019 |
| PARK YOUNGWOO | 5 | 2015–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 23 | 2015–2020 |
| Tokyo, JP | 17 | 1997–2008 |
| Kanagawa, JP | 15 | 2006–2014 |
| Seongnam-si, KR | 4 | 2020 |
| Kawasaki, JP | 3 | 2006–2011 |