Inventor
Jin-Il Lee
Inventor
Seongnam-si, KR
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices17%
C23CCoating metallic material13%
H10NElectric solid-state devices not otherwise provided for13%
H10DInorganic electric semiconductor devices11%
G11CStatic stores9%
H01LSemiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B24BMachines, devices, or processes for grinding or polishing2%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%
PatentTitleYear
10,847,464Semiconductor device including conductive structure having nucleation structure and method of forming the same202010,580,736Semiconductor device including conductive structure having nucleation structure and method of forming the same202010,559,580Semiconductor memory device202010,366,955Semiconductor device including conductive structure having nucleation structure and method of forming the same201910,103,163Semiconductor memory device201810,079,203Vertical memory devices and methods of manufacturing the same20189,997,534Vertical memory devices20189,905,568'Nonvolatile memory device and a method for fabricating the same'20189,893,077'Memory device and method of manufacturing the same'20189,850,530Automatic real-time PCR system for the various analysis of biological sample20178,852,686'Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device'20148,834,968'Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device'20148,703,237'Methods of forming a material layer and methods of fabricating a memory device'20148,645,790'Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device'20148,580,648'Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure'20138,553,471'Data output buffer and memory device'20138,531,898'On-die termination circuit, data output buffer and semiconductor memory device'20138,525,244'Germanium compound, semiconductor device fabricated using the same, and methods of forming the same'20138,263,963'Phase change memory device'20128,187,914'Methods of forming a phase change memory device'20128,142,846'Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device'20128,133,758'Method of fabricating phase-change memory device having TiC layer'20128,034,683'Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed'20118,021,977'Methods of forming contact structures and semiconductor devices fabricated using contact structures'20117,943,502'Method of forming a phase change memory device'20117,867,880'Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors'20117,855,145'Gap filling method and method for forming semiconductor memory device using the same'20107,838,326'Methods of fabricating semiconductor device including phase change layer'20107,803,654'Variable resistance non-volatile memory cells and methods of fabricating same'20107,759,667'Phase change memory device including resistant material'20107,727,884'Methods of forming a semiconductor device including a phase change material layer'20107,569,417'Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device'20097,514,315'Methods of forming capacitor structures having aluminum oxide diffusion barriers'20097,432,183'Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same'20087,271,055'Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors'20077,091,102'Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby'20067,049,232'Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same'20067,034,350'Capacitors including a cavity containing a buried layer'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (37)· patent assignee history
2006–2010Based in Sungnam, KR· patent location history
2007–2014Based in Gyeonggi-do, KR· patent location history
2009–2020Based in Seongnam-si, KR· patent location history
2010–2013Based in Yongin-si, KR· patent location history
2012–2014Patents assigned to LEE JIN-IL (10)· patent assignee history
2012–2014Patents assigned to CHO SUNG-LAE (5)· patent assignee history
2012–2014Patents assigned to PARK HYE-YOUNG (5)· patent assignee history
2012–2014Patents assigned to BAE BYOUNG-JAE (3)· patent assignee history
2013–2020Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 37 | 2006–2020 |
| LEE JIN-ILself | 10 | 2012–2014 |
| CHO SUNG-LAE | 5 | 2012–2014 |
| PARK HYE-YOUNG | 5 | 2012–2014 |
| BAE BYOUNG-JAE | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seongnam-si, KR | 15 | 2009–2020 |
| Hwaseong-si, KR | 9 | 2013–2020 |
| Gyeonggi-do, KR | 7 | 2007–2014 |
| Yongin-si, KR | 2 | 2010–2013 |
| Sungnam, KR | 2 | 2006–2010 |