Inventor
BAO-RU YOUNG
Inventor
TW
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
G06FElectric digital data processing11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
B82YSpecific uses or applications of nanostructures8%
H03KPulse technique1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
H10BElectronic memory devices1%
PatentTitleYear
12,575,387Method for fabricating a semiconductor device202612,520,597Integrated circuit structure having tap cell202612,501,713Revising IC layout design to eliminate gaps between isolation structures202512,484,299Integrated circuit structure with gate structures on grids and method for forming the same202512,471,343Gate isolation features in semiconductor devices and methods of fabricating the same202512,423,496Methods for forming pattern layout, mask, and semiconductor structure202512,426,333Polysilicon design for replacement gate technology202512,419,102Semiconductor devices202512,375,080Fuse structure202512,353,815Method for chip integration202512,349,446Structure and formation method of semiconductor device with epitaxial structures202512,336,250Semiconductor device structure and method for forming the semiconductor device structure202512,300,696Semiconductor devices having fins and multiple isolation regions202512,288,783Integrated standard cell structure202512,288,784Semiconductor structures having wells with protruding sections for pickup cells202512,278,147Semiconductor structure and method for forming the same202512,255,201ESD structure202512,199,034Via rail structure202512,199,087Dummy poly layout for high density devices202512,073,168Leakage reduction between two transistor devices on a same continuous fin202412,073,166Method and structure for mandrel patterning202412,068,201Semiconductor devices202412,068,318Method of forming epitaxial features202412,009,399Semiconductor device suppressing rounded shapes of source/drain contact layers202411,996,837Fuse structure202411,996,329Method and IC design with non-linear power rails202411,989,496Method and structure for mandrel patterning202411,948,935Method of forming integrated circuit structure202411,929,288Gate-all-around device with different channel semiconductor materials and method of forming the same202411,894,443Method of making gate structure of a semiconductor device202411,881,477Dummy poly layout for high density devices202411,869,800Method for fabricating a semiconductor device202411,855,073ESD structure202311,855,081Method of forming epitaxial features202311,797,743Leakage reduction between two transistor devices on a same continuous fin202311,798,942Methods of manufacturing semiconductor devices having fins and an isolation region202311,742,244Leakage reduction methods and structures thereof202311,721,687Semiconductor structures having wells with protruding sections for pickup cells202311,721,590Semiconductor device and method202311,688,654Test line structure, semiconductor structure and method for forming test line structure202311,581,221Method and IC design with non-linear power rails202311,532,607ESD structure and semiconductor structure202211,527,527Tap cell, integrated circuit structure and forming method thereof202211,507,725Integrated circuit layouts with line-end extensions202211,508,624Gate-all-around device with different channel semiconductor materials and method of forming the same202211,508,631Semiconductor device202211,482,518Semiconductor structures having wells with protruding sections for pickup cells202211,398,559Mitigation of time dependent dielectric breakdown202211,393,726Metal gate structure of a CMOS semiconductor device and method of forming the same202211,393,724Semiconductor device and method202211,380,775Gate structure of a semiconductor device and method of making2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (51)· patent assignee history
2022–2026Based in TW· patent location history
2025Patents assigned to TAIWAN SEMICONDUCOTR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 51 | 2022–2026 |
| TAIWAN SEMICONDUCOTR MFG COMPANY LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 51 | 2022–2026 |