Inventor
INJUN HWANG
Inventor
KR
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices32%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
PatentTitleYear
12,464,793Nitride semiconductor buffer structure and semiconductor device including the same202512,119,397Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same202412,002,879High electron mobility transistor and method of manufacturing the same202411,888,059Field effect transistor including gradually varying composition channel202411,837,642Semiconductor device and method of fabricating the same202311,728,419High electron mobility transistor202311,588,046High electron mobility transistor202311,581,269Semiconductor thin film structures and electronic devices including the same2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to SAMSUNG ELECTRONICS CO LTD (8)· patent assignee history
2023–2025Based in KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 8 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 8 | 2023–2025 |