Inventor
Cheng-Hsien Cheng
Inventor
Hsinchu, TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices28%
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices22%
G11CStatic stores20%
A63BApparatus for physical training, gymnastics, swimming, climbing, or fencing2%
G06FElectric digital data processing2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
11,062,759Memory device and programming method thereof202110,796,753Method and system to determine quick pass write operation in increment step pulse programming operation202010,644,0183D memory having plural lower select gates202010,460,797Method for programming non-volatile memory and memory system201910,340,017Erase-verify method for three-dimensional memories and memory system20199,786,794'Method of fabricating memory structure'20179,589,982'Structure and method of operation for improved gate capacity for 3D NOR flash memory'20179,548,121'Memory device having only the top poly cut'20179,524,784'Device and method for improved threshold voltage distribution for non-volatile memory'20169,437,612'Three-dimensional memory'20169,349,878'Multi level programmable memory structure'20169,324,431'Floating gate memory device with interpoly charge trapping structure'20169,209,316'ROM for constraining 2nd-bit effect'20159,048,263'Manufacturing method of non-volatile memory'20159,018,085'Method of fabricating memory device with charge storage layer at gap located side of gate dielectric underneath the gate'20158,796,754'Multi level programmable memory structure with multiple charge storage structures and fabricating method thereof'20148,791,522'Non-volatile memory'20148,698,222'Memory device with charge storage layers at the gaps located both sides of the gate dielectric underneath the gate'20145,465,959'Golf club body made of composite material and having a bent front section'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995Based in Kaohsiung, TW· patent location history
2014–2021Patents assigned to MACRONIX INT CO LTD (18)· patent assignee history
2014–2015Patents assigned to CHENG CHENG-HSIEN (4)· patent assignee history
2014–2015Patents assigned to TSAI WEN-JER (4)· patent assignee history
2014–2015Patents assigned to CHENG CHIH-CHIEH (3)· patent assignee history
2014Patents assigned to YAN SHIH-GUEI (3)· patent assignee history
2014–2017Based in Hsinchu, TW· patent location history
2016–2021Based in Yunlin County, TW· patent location history
2017Based in Puzih, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 18 | 2014–2021 |
| CHENG CHENG-HSIENself | 4 | 2014–2015 |
| TSAI WEN-JER | 4 | 2014–2015 |
| CHENG CHIH-CHIEH | 3 | 2014–2015 |
| YAN SHIH-GUEI | 3 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 10 | 2014–2017 |
| Yunlin County, TW | 7 | 2016–2021 |
| Puzih, TW | 1 | 2017 |
| Kaohsiung, TW | 1 | 1995 |