Inventor

Chihyu Su

Inventor

Guangdong, CN

Overview

2017–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices32%

H10DInorganic electric semiconductor devices31%

H10KOrganic electric solid-state devices21%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%

PatentTitleYear

10,629,745Manufacturing method and structure of oxide thin film transistor2020 10,373,989Thin-film transistor array substrate and manufacturing method thereof2019 10,109,659TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof2018 10,043,829TFT backplate structure and manufacture method thereof2018 9,960,195Method for manufacturing TFT backplane and structure of TFT backplane2018 9,947,699Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof2018 9,922,995'Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates'2018 9,876,037Thin-film transistor array substrate and manufacturing method thereof2018 9,799,677'Structure of dual gate oxide semiconductor TFT substrate'2017 9,786,695'TFT substrate structure'2017 9,786,691'TFT substrate structure'2017 9,773,851'OLED display device comprising an insulative layer of varying thickness and manufacturing method thereof'2017 9,768,200'TFT backplate structure and manufacture method thereof'2017 9,768,202'TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof'2017 9,768,323'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,748,285'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,741,858'Amorphous silicon semiconductor TFT backboard structure'2017 9,728,560'TFT substrate structure'2017 9,704,887'TFT substrate structure'2017 9,698,172'TFT substrate structure'2017 9,634,032'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,601,523'Dual gate TFT substrate structure utilizing COA skill'2017 9,589,995'TFT substrate having three parallel capacitors'2017 9,570,620'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,543,442'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2017–2020Patents assigned to SHENZHEN CHINA STAR OPTOELECT (25)· patent assignee history

2017–2020Based in Guangdong, CN· patent location history

2017–2019Based in Shenzhen, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHENZHEN CHINA STAR OPTOELECT	25	2017–2020

Locations

Location	Patents	Span
Guangdong, CN	13	2017–2020
Shenzhen, CN	12	2017–2019