Inventor
HUNG-YI HUANG
Inventor
TW
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
G06FElectric digital data processing4%
H04MTelephonic communication3%
C23CCoating metallic material3%
LOC143%
H04NPictorial communication, e.g. television2%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
12,588,268Liner-free conductive structures202612,557,568Conductive feature formation and structure202612,535,853Electronic device202612,538,771Barrier layer for an interconnect structure202612,494,423Semiconductor device including stacked via contact and method for manufacturing the same202512,431,431Conductive structure interconnects with downward projections202512,433,006Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device202512,394,625Fin field-effect transistor device and method of forming the same202512,341,013Method and structure for barrier-less plug202512,327,058Display method and apparatus202512,327,788Gate to source drain interconnects202512,310,050Semiconductor structure and method of forming the same202512,255,070Semiconductor devices and methods of manufacturing202512,199,656Electronic device, screen assembly, and screen protection member and manufacturing method thereof2025D1045888Wearable device with graphical user interface202412,087,642Selective dual silicide formation202412,087,575Conductive feature formation and structure2024D1040776Mobile phone202412,057,397Capping layer for liner-free conductive structures202412,051,592Method and structure for barrier-less plug202412,002,867Contact structure for semiconductor device202411,901,183Fin field-effect transistor device and method of forming the same2024D1012127Wearable device with graphical user interface202411,853,120Foldable terminal and screen-on control method for foldable terminal202311,817,384Interconnect structure and manufacturing method for the same202311,676,868Selective dual silicide formation202311,594,609Liner-free conductive structures202311,521,929Capping layer for liner-free conductive structures202211,516,325Electronic device202211,444,173Semiconductor device structure with salicide layer and method for forming the same202211,309,217Contact plug and method of formation202211,309,213Method for manufacturing semiconductor structure202211,232,945Conductive feature formation and structure202211,222,818Formation method of semiconductor device structure with metal-semiconductor compound region202211,217,524Interconnect structure and manufacturing method for the same202211,158,539Method and structure for barrier-less plug2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (28)· patent assignee history
2021–2026Based in TW· patent location history
2022–2026Patents assigned to HUAWEI TECH CO LTD (8)· patent assignee history
2022–2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 28 | 2021–2026 |
| HUAWEI TECH CO LTD | 8 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 28 | 2021–2026 |
| CN | 8 | 2022–2026 |