Inventor
June-mo Koo
Inventor
Seoul, KR
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
H10DInorganic electric semiconductor devices19%
G11CStatic stores10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures6%
H10NElectric solid-state devices not otherwise provided for6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
H01LSemiconductor devices3%
C23CCoating metallic material2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
9,443,892'Image sensor and method of forming the same'20169,209,214'Semiconductor device and method of fabricating the same'20158,958,002'Image sensors'20158,570,409'Image sensors and methods of manufacturing image sensors'20138,319,291'Non-volatile memory device with data storage layer'20128,299,520'Semiconductor devices including auxiliary gate electrodes and methods of fabricating the same'20128,148,767'Semiconductor memory devices including recess-type control gate electrodes and methods of fabricating the semiconductor memory devices'20128,124,968'Non-volatile memory device'20128,120,006'Non-volatile memory device'20128,097,304'Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the same'20128,017,991'Non-volatile memory device and methods of operating and fabricating the same'20118,014,068'Wire grid polarizer and method of manufacturing the same'20117,986,545'Non-volatile memory device and method of operating the same'20117,947,590'Method of manufacturing a non-volatile memory device'20117,948,024'Multi-layered, vertically stacked non-volatile memory device and method of fabrication'20117,932,551'Nonvolatile memory device and method of fabricating the same comprising a dual fin structure'20117,910,967'Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same'20117,910,909'Non-volatile memory device and method of fabricating the same'20117,894,265'Non-volatile memory device and operation method of the same'20117,885,115'Non-volatile memory devices and methods of operating non-volatile memory devices'20117,833,890'Semiconductor device having a pair of fins and method of manufacturing the same'20107,829,932'Semiconductor device'20107,813,180'Non-volatile memory devices and methods of operating the same'20107,796,432'Non-volatile memory device and method of operating the same'20107,750,393'Non-volatile memory device with independent channel regions adjacent different sides of a common control gate'20107,745,233'Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same'20107,700,935'Non-volatile memory device and method of fabricating the same'20107,691,441'Method of forming carbon fibers using metal-organic chemical vapor deposition'20107,663,136'Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same'20107,622,761'Non-volatile memory device and method of manufacturing the same'20097,598,095'Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same'20097,585,755'Method of fabricating non-volatile memory device'20097,560,344'Semiconductor device having a pair of fins and method of manufacturing the same'20097,551,491'Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof'20097,459,736'Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same'20087,250,649'Capacitor of a memory device and fabrication method thereof'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (36)· patent assignee history
2007–2016Based in Seoul, KR· patent location history
2009–2012Based in Yongin-si, KR· patent location history
2012–2013Patents assigned to KOO JUNE-MO (7)· patent assignee history
2012–2013Patents assigned to KIM SUK-PIL (4)· patent assignee history
2012–2013Patents assigned to PARK YOON-DONG (4)· patent assignee history
2012Patents assigned to YOON TAE-EUNG (2)· patent assignee history
2012Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 36 | 2007–2016 |
| KOO JUNE-MOself | 7 | 2012–2013 |
| KIM SUK-PIL | 4 | 2012–2013 |
| PARK YOON-DONG | 4 | 2012–2013 |
| YOON TAE-EUNG | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 30 | 2007–2016 |
| Yongin-si, KR | 5 | 2009–2012 |
| Gyeonggi-do, KR | 1 | 2012 |