Inventor
JAGAR SINGH
Inventor
US
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices39%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B82YSpecific uses or applications of nanostructures1%
H03KPulse technique1%
H10BElectronic memory devices1%
PatentTitleYear
12,593,683Structure with inductor embedded in bonded semiconductor substrates and methods202612,336,243Lateral bipolar transistor with gated collector202512,324,217Laterally diffused metal-oxide semiconductor with gate contact202512,295,161Trench isolation having three portions with different materials, and LDMOS FET including same202512,159,926Lateral bipolar transistor202412,074,211Lateral bipolar transistors202411,967,637Fin-based lateral bipolar junction transistor with reduced base resistance and method202411,967,635Lateral bipolar transistor202411,935,923Lateral bipolar transistor with gated collector202411,848,374Bipolar junction transistors including a portion of a base layer inside a cavity in a dielectric layer202311,843,034Lateral bipolar transistor202311,837,460Lateral bipolar transistor202311,837,653Lateral bipolar junction transistor including a stress layer and method202311,810,969Lateral bipolar transistor202311,804,542Annular bipolar transistors202311,784,224Lateral bipolar transistor structure with base over semiconductor buffer and related method202311,769,806Bipolar junction transistors including wrap-around emitter and collector contacts202311,721,722Bipolar junction transistors including a stress liner202311,710,771Non-self-aligned lateral bipolar junction transistors202311,652,142Lateral bipolar junction transistors having an emitter extension and a halo region202311,588,044Bipolar junction transistor (BJT) structure and related method202311,588,056Structure with polycrystalline active region fill shape(s), and related method202311,575,029Lateral bipolar junction transistor and method202311,508,810Diode structures202211,462,648Fin-based Schottky diode for integrated circuit (IC) products and methods of making such a Schottky diode202211,456,384Fin-based laterally diffused structure having a gate with two adjacent metal layers and method for manufacturing the same202211,387,353Structure providing charge controlled electronic fuse202211,276,770Gate controlled lateral bipolar junction/heterojunction transistors202211,195,947Semiconductor device with doped region adjacent isolation structure in extension region202111,164,978High-voltage diode finFET platform designs202111,152,496IC structure base and inner E/C material on raised insulator, and methods to form same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to GLOBALFOUNDRIES US INC (30)· patent assignee history
2021–2026Based in US· patent location history
2022Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES US INC | 30 | 2021–2026 |
| GLOBALFOUNDRIES INC | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 31 | 2021–2026 |