Inventor
Michael A. Mastro
Inventor
Fairfax, VA, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices21%
H01LSemiconductor devices15%
C30BSingle-crystal growth12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
B82YSpecific uses or applications of nanostructures3%
C23CCoating metallic material3%
PatentTitleYear
10,494,738Growth of crystalline materials on two-dimensional inert materials201910,266,963Growth of crystalline materials on two-dimensional inert materials20199,111,786'Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material'20159,105,499'Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material'20159,018,056'Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material'20158,900,939'Transistor with enhanced channel charge inducing material layer and threshold voltage control'20148,779,456'Inverted light-emitting diode having plasmonically enhanced emission'20148,653,550'Inverted light emitting diode having plasmonically enhanced emission'20148,648,390'Transistor with enhanced channel charge inducing material layer and threshold voltage control'20148,445,383'Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices'20138,384,129'Transistor with enhanced channel charge inducing material layer and threshold voltage control'20138,254,086'Two-step synthesis of manganese oxide nanostructures on carbon for supercapacitor applications'20128,237,152'White light emitting device based on polariton laser'20127,928,471'Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor'20117,790,230'Metal chloride seeded growth of electronic and optical materials'20106,906,351'Group III-nitride growth on Si substrate using oxynitride interlayer'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2011Based in Alexandria, VA, US· patent location history
2010–2019Patents assigned to US NAVY (14)· patent assignee history
2012–2019Patents assigned to MASTRO MICHAEL A (12)· patent assignee history
2012–2019Patents assigned to KUB FRANCIS J (9)· patent assignee history
2012–2019Patents assigned to EDDY JR CHARLES R (8)· patent assignee history
2012–2019Based in Fairfax, VA, US· patent location history
2015–2019Patents assigned to ANDERSON TRAVIS J (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| US NAVY | 14 | 2010–2019 |
| MASTRO MICHAEL Aself | 12 | 2012–2019 |
| KUB FRANCIS J | 9 | 2012–2019 |
| EDDY JR CHARLES R | 8 | 2012–2019 |
| ANDERSON TRAVIS J | 4 | 2015–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fairfax, Virginia, US | 13 | 2012–2019 |
| Alexandria, Virginia, US | 3 | 2005–2011 |