Inventor
Vladimir Rumennik
Inventor
Los Altos, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices72%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
6,828,631'High-voltage transistor with multi-layer conduction region'20046,800,903'High-voltage transistor with multi-layer conduction region'20046,787,437'Method of making a high-voltage transistor with buried conduction regions'20046,777,749'High-voltage transistor with multi-layer conduction region'20046,768,172'High-voltage transistor with multi-layer conduction region'20046,724,041'Method of making a high-voltage transistor with buried conduction regions'20046,633,065'High-voltage transistor with multi-layer conduction region'20036,600,182'High current field-effect transistor'20036,570,219'High-voltage transistor with multi-layer conduction region'20036,207,994'High-voltage transistor with multi-layer conduction region'20016,168,983'Method of making a high-voltage transistor with multiple lateral conduction layers'20015,430,315'Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current'19955,411,901'Method of making high voltage transistor'19955,323,044'Bi-directional MOSFET switch'19945,274,259'High voltage transistor'19935,258,636'Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes'19935,130,767'Plural polygon source pattern for mosfet'19925,072,268'MOS gated bipolar transistor'19915,008,725'Plural polygon source pattern for MOSFET'19914,409,607'Normally-on enhancement mode MOSFET with negative threshold gating'19834,220,963'Fast recovery diode with very thin base'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1980–1992Patents assigned to INT RECTIFIER CORP (3)· patent assignee history
1980–1992Based in El Segundo, CA, US· patent location history
1983Patents assigned to XEROX CORP (1)· patent assignee history
1983Based in Playa Del Rey, CA, US· patent location history
1991–2004Patents assigned to POWER INTEGRATIONS INC (15)· patent assignee history
1991–2004Based in Los Altos, CA, US· patent location history
2003Based in Los Altos Hills, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| POWER INTEGRATIONS INC | 15 | 1991–2004 |
| INT RECTIFIER CORP | 3 | 1980–1992 |
| XEROX CORP | 1 | 1983 |
Locations
| Location | Patents | Span |
|---|---|---|
| Los Altos, California, US | 16 | 1991–2004 |
| El Segundo, California, US | 3 | 1980–1992 |
| Los Altos Hills, California, US | 1 | 2003 |
| Playa Del Rey, California, US | 1 | 1983 |