Inventor

Hirofumi Kozakai

Inventor
Tokyo, JP

Overview

11→
Patents
2016–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 11 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01LSemiconductor devices18%
B82YSpecific uses or applications of nanostructures8%
C03CChemical composition of glasses, glazes or vitreous enamels8%
G02BOptical elements, systems or apparatus8%
C23CCoating metallic material5%
PatentTitleYear
11,003,068Reflective mask blank, reflective mask and method of manufacturing semiconductor device202110,620,527Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method202010,429,728Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method201910,347,485Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device201910,295,900Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method201910,001,699Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method20189,897,909'Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method'20189,740,091'Substrate with multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method of manufacturing the same, and method of manufacturing a semiconductor device'20179,507,254'Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device'20169,494,851'Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method'20169,348,217'Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016–2021Patents assigned to HOYA CORP (11)· patent assignee history
2016–2021Based in Tokyo, JP· patent location history
2016–2018Based in Shinjuku-ku, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HOYA CORP112016–2021
Locations
LocationPatentsSpan
Tokyo, JP72016–2021
Shinjuku-ku, JP42016–2018