Inventor
Kazuya Nishihori
Inventor
Tokyo, JP
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices47%
H01LSemiconductor devices12%
H03KPulse technique12%
H10BElectronic memory devices12%
H01QAntennas, i.e. radio aerials6%
H03FAmplifiers6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
10,347,655Semiconductor switch20199,768,268'Semiconductor device'20178,674,357'Method for measuring impurity concentration profile, wafer used for same, and method for manufacturing semiconductor device using same'20146,936,870'Heterojunction type compound semiconductor field effect transistor and its manufacturing method'20056,134,424'High-frequency power amplifier and mobile communication device using same'20006,114,195'Manufacturing method of compound semiconductor field effect transistor'20005,929,473'MMIC semiconductor device with WN.sub.x capacitor electrode'19995,670,808'Metal oxide capacitor with a WN.sub.X electrode'19975,273,937'Metal semiconductor device and method for producing the same'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2019Patents assigned to TOSHIBA KK (9)· patent assignee history
1993–2014Based in Tokyo, JP· patent location history
2017–2019Based in Shibuya, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 9 | 1993–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 7 | 1993–2014 |
| Shibuya, JP | 2 | 2017–2019 |