Inventor

Hisashi Nakane

Inventor

Kawasaki, JP

Overview

38→

Patents

1977–2021

Patent span

Physics

Primary field (CPC G)

Patents· 38 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices31%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%

C09DCoating compositions, e.g. paints, varnishes or lacquers6%

C03CChemical composition of glasses, glazes or vitreous enamels5%

H01JElectric discharge tubes or discharge lamps5%

C23CCoating metallic material3%

H05KPrinted circuits3%

B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%

B41JTypewriters2%

PatentTitleYear

11,005,318Rotor for rotary electric machine and vehicle drive device including the rotor for rotary electric machine2021 10,933,662Image forming method, image forming apparatus, and image-formed matter2021 5,281,508'Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol'1994 4,904,571'Remover solution for photoresist'1990 4,902,770'Undercoating material for photosensitive resins'1990 4,844,832'Containing an arylsulfonic acid, a phenol and a naphalenic solvent'1989 4,833,067'Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant'1989 4,797,348'Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure'1989 4,784,937'Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant'1988 4,738,915'Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone'1988 4,737,438'Negative-working photosensitive composition comprising a diphenylamine-melamine condensate and an azide compound'1988 4,735,890'Photomasks for photolithographic fine patterning'1988 4,702,992'Method of preparing photoresist material with undercoating of photoextinction agent and condensation product'1987 4,694,040'Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof'1987 D0291413'Wafer holding frame'1987 4,610,953'Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide'1986 4,590,149'Method for fine pattern formation on a photoresist'1986 4,588,675'Method for fine pattern formation on a photoresist'1986 4,578,559'Plasma etching method'1986 4,557,996'Method for providing a pattern-wise photoresist layer on a substrate plate and a surface-protected substrate plate therefor'1985 4,550,242'Automatic plasma processing device and heat treatment device for batch treatment of workpieces'1985 4,550,239'Automatic plasma processing device and heat treatment device'1985 4,483,651'Automatic apparatus for continuous treatment of leaf materials with gas plasma'1984 4,474,642'Method for pattern-wise etching of a metallic coating film'1984 4,465,553'Method for dry etching of a substrate surface'1984 4,401,745'Composition and process for ultra-fine pattern formation'1983 4,385,086'Method for preventing leaching of contaminants from solid surfaces'1983 4,336,438'Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction'1982 4,318,767'Apparatus for the treatment of semiconductor wafers by plasma reaction'1982 4,277,525'Liquid compositions for forming silica coating films'1981 4,268,539'Liquid coating composition for forming transparent conductive films and a coating process for using said composition'1981 4,245,154'Apparatus for treatment with gas plasma'1981 4,243,740'Light sensitive compositions of polymethyl isopropenyl ketone'1981 4,209,581'Soluble photosensitive resin composition'1980 4,208,159'Apparatus for the treatment of a wafer by plasma reaction'1980 4,174,222'Positive-type O-quinone diazide containing photoresist compositions'1979 4,149,923'Apparatus for the treatment of wafer materials by plasma reaction'1979 4,045,231'Photosensitive resin composition for flexographic printing plates'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1994Patents assigned to TOKYO OHKA KOGYO CO LTD (28)· patent assignee history

1977–1990Based in Kawasaki, JP· patent location history

1981–1987Patents assigned to TOKYO DENSHI KAGAKU KK (4)· patent assignee history

1985–1987Patents assigned to TOKYO DENSHI KAGAKU KABUSHIKI (3)· patent assignee history

1985–2021Based in Kanagawa, JP· patent location history

1988–1994Based in Yokohama, JP· patent location history

2021Patents assigned to AISIN AW CO (1)· patent assignee history

2021Patents assigned to AKIMA Mio (1)· patent assignee history

2021Based in Kariya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOKYO OHKA KOGYO CO LTD	28	1977–1994
TOKYO DENSHI KAGAKU KK	4	1981–1987
TOKYO DENSHI KAGAKU KABUSHIKI	3	1985–1987
AISIN AW CO	1	2021
AKIMA Mio	1	2021

Locations

Location	Patents	Span
Kawasaki, JP	26	1977–1990
Yokohama, JP	6	1988–1994
Kanagawa, JP	5	1985–2021
Kariya, JP	1	2021