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Inventor

Jian Shi

Inventor
West Lafayette, IN, US

Overview

2→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B32Bprimary
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form14%
C08JWorking-up14%
G11CStatic stores14%
H01LSemiconductor devices14%
H10NElectric solid-state devices not otherwise provided for14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
PatentTitleYear
10,600,959Dopant-driven phase transitions in correlated metal oxides20206,334,926'Method for low temperature lamination of metals to fluoropolymers'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002Patents assigned to NAT UNIVERSITY OF SINGAPORE AN (1)· patent assignee history
2002Based in Singapore, SG· patent location history
2020Patents assigned to HARVARD COLLEGE (1)· patent assignee history
2020Based in West Lafayette, IN, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HARVARD COLLEGE12020
NAT UNIVERSITY OF SINGAPORE AN12002
Locations
LocationPatentsSpan
West Lafayette, IN, US12020
Singapore, SG12002