Inventor
Roger A. Booth, Jr.
Inventor
Wappingers Falls, NY, US
Overview
Patents· 72 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10BElectronic memory devices16%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G01RMeasuring electric variables2%
H05KPrinted circuits1%
Y10TTechnical subjects covered by former us classification1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,818,668Metal trench capacitor and improved isolation and methods of manufacture20209,899,391'Metal trench capacitor and improved isolation and methods of manufacture'20189,583,497'Metal trench capacitor and improved isolation and methods of manufacture'20179,478,600'Method of forming substrate contact for semiconductor on insulator (SOI) substrate'20169,293,520'Method of forming substrate contact for semiconductor on insulator (SOI) substrate'20169,287,272'Metal trench capacitor and improved isolation and methods of manufacture'20169,281,390'Structure and method for forming programmable high-K/metal gate memory device'20169,252,201'Method of forming back-end-of-line planar resistor'20169,159,578'Self-aligned devices and methods of manufacture'20159,087,928'High density memory cells using lateral epitaxy'20159,059,213'Embedded DRAM for extremely thin semiconductor-on-insulator'20158,969,969'High threshold voltage NMOS transistors for low power IC technology'20158,936,992'Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate'20158,927,361'High threshold voltage NMOS transistors for low power IC technology'20158,921,198'Method and structure for forming a deep trench capacitor'20148,916,919'Interdigitated vertical native capacitor'20148,846,470'Metal trench capacitor and improved isolation and methods of manufacture'20148,836,050'Structure and method to fabricate a body contact'20148,829,585'High density memory cells using lateral epitaxy'20148,809,994'Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate'20148,691,697'Self-aligned devices and methods of manufacture'20148,664,075'High capacitance trench capacitor'20148,652,916'Self aligned impact-ionization MOS (I-MOS) device and methods of manufacture'20148,647,945'Method of forming substrate contact for semiconductor on insulator (SOI) substrate'20148,642,440'Capacitor with deep trench ion implantation'20148,629,009'Programmable high-k/metal gate memory device'20148,564,069'Field effect transistors with low body resistance and self-balanced body potential'20138,525,263'Programmable high-k/metal gate memory device'20138,513,723'Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip'20138,492,811'Self-aligned strap for embedded capacitor and replacement gate devices'20138,492,818'High capacitance trench capacitor'20138,481,397'Polysilicon resistor and E-fuse for integration with metal gate and high-k dielectric'20138,455,875'Embedded DRAM for extremely thin semiconductor-on-insulator'20138,455,768'Back-end-of-line planar resistor'20138,455,979'Three dimensional integrated deep trench decoupling capacitors'20138,420,476'Integrated circuit with finFETs and MIM fin capacitor'20138,409,989'Structure and method to fabricate a body contact'20138,384,145'Non-volatile memory device using hot-carrier injection'20138,378,450'Interdigitated vertical parallel capacitor'20138,299,530'Structure and method to fabricate pFETS with superior GIDL by localizing workfunction'20128,288,240'Method of making an MIM capacitor and MIM capacitor structure formed thereby'20128,242,549'Dynamic random access memory cell including an asymmetric transistor and a columnar capacitor'20128,232,162'Forming implanted plates for high aspect ratio trenches using staged sacrificial layer removal'20128,222,104'Three dimensional integrated deep trench decoupling capacitors'20128,053,352'Method and mesh reference structures for implementing Z-axis cross-talk reduction through copper sputtering onto mesh reference planes'20118,030,736'Fin anti-fuse with reduced programming voltage'20117,977,766'Trench anti-fuse structures for a programmable integrated circuit'20117,879,660'Semiconductor structures integrating damascene-body FinFET\'s and planar devices on a common substrate and methods for forming such semiconductor structures'20117,875,919'Shallow trench capacitor compatible with high-K / metal gate'20117,863,122'Bulk FinFET device'20117,834,387'Metal gate compatible flash memory gate stack'20107,825,479'Electrical antifuse having a multi-thickness dielectric layer'20107,785,979'Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same'20107,784,009'Electrically programmable π-shaped fuse structures and design process therefore'20107,759,766'Electrical fuse having a thin fuselink'20107,700,466'Tunneling effect transistor with self-aligned gate'20107,692,250'Semiconductor structures integrating damascene-body FinFET\'s and planar devices on a common substrate and methods for forming such semiconductor structures'20107,671,394'Embedded trench capacitor having a high-k node dielectric and a metallic inner electrode'20107,667,248'Bulk FinFET device'20107,659,599'Patterned silicon-on-insulator layers and methods for forming the same'20107,656,005'Electrically programmable π-shaped fuse structures and methods of fabrication thereof'20107,566,629'Patterned silicon-on-insulator layers and methods for forming the same'20097,550,773'FinFET with top body contact'20097,531,388'Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabricating thereof'20097,525,299'Apparatus for accessing and probing the connections between a chip package and a printed circuit board'20097,517,764'Bulk FinFET device'20097,417,300'Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof'20087,352,034'Semiconductor structures integrating damascene-body FinFET\'s and planar devices on a common substrate and methods for forming such semiconductor structures'20087,353,130'Method and apparatus for implementing automatic-calibration of TDR probing system'20087,299,144'Method and apparatus for implementing automatic-calibration of TDR probing system'20077,288,804'Electrically programmable π-shaped fuse structures and methods of fabrication thereof'20077,235,875'Modular heat sink decoupling capacitor array forming heat sink fins and power distribution interposer module'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to IBM (69)· patent assignee history
2007–2011Based in Rochester, MN, US· patent location history
2009–2016Based in Wappingers Falls, NY, US· patent location history
2012–2014Patents assigned to BOOTH JR ROGER A (23)· patent assignee history
2012–2014Patents assigned to CHENG KANGGUO (23)· patent assignee history
2012–2014Patents assigned to PEI CHENGWEN (19)· patent assignee history
2012–2014Patents assigned to WANG GENG (15)· patent assignee history
2012–2014Based in Hopewell Junction, NY, US· patent location history
2013–2020Based in Irvine, CA, US· patent location history
2015–2016Based in San Diego, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 69 | 2007–2020 |
| BOOTH JR ROGER Aself | 23 | 2012–2014 |
| CHENG KANGGUO | 23 | 2012–2014 |
| PEI CHENGWEN | 19 | 2012–2014 |
| WANG GENG | 15 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wappingers Falls, New York, US | 32 | 2009–2016 |
| Rochester, Minnesota, US | 16 | 2007–2011 |
| Irvine, California, US | 11 | 2013–2020 |
| Hopewell Junction, New York, US | 10 | 2012–2014 |
| San Diego, California, US | 2 | 2015–2016 |