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Inventor

Min Sang Park

Inventor
Yongin-si, KR

Overview

44→
Patents
2001–2021
Patent span
Physics
Primary field (CPC G)

Patents· 44 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores32%
G06FElectric digital data processing16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01LSemiconductor devices8%
C23CCoating metallic material3%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy3%
H03KPulse technique3%
H10BElectronic memory devices3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
G05FSystems for regulating electric or magnetic variables2%
PatentTitleYear
11,132,025Apparatus including multiple touch screens and method of changing screens therein202111,093,132Portable device comprising a touch-screen display, and method for controlling same202111,092,109Block insert and cylinder structure of vehicle engine including the same202111,010,058Solid state memory component202110,804,248Method and device for controlling operation using temperature deviation in multi-chip package202010,795,940Chatbot-based cloud management system and method for operating the same202010,693,116Porous separator for secondary battery and manufacturing method thereof202010,615,389Separator for secondary battery having hydrophobic surface and method of preparing same202010,593,650Method and device for controlling operation using temperature deviation in multi-chip package202010,571,944Semiconductor devices having voltage generators using weighted combination of feedback voltages202010,446,217Memory device and control method thereof201910,431,805Separator for secondary cell having excellent heat resistance and shutdown properties201910,418,116Memory device with control logic configured to group memory blocks, and determine driving voltages to be respectively applied to the groups to control memory operation201910,394,652Memory system for performing read retry operation and operating method thereof201910,353,776Memory system for performing read retry operation and operating method thereof201910,296,226Control logic, semiconductor memory device, and operating method201910,226,886Slim injection molding apparatus201910,224,102Semiconductor memory device and operation method thereof201910,185,341Semiconductor devices having voltage generators using weighted combination of feedback voltages201910,176,852Semiconductor memory devices, methods of operation, and memory systems having reduced decoder width and core skew201910,146,442Control logic, semiconductor memory device, and operating method201810,090,281Method and device for controlling operation using temperature deviation in multi-chip package201810,037,805Method and controller for programming non-volatile memory20189,977,712Memory device with different parity regions20189,859,014'Semiconductor memory device including multi-level cell and programming method thereof'20189,711,487'Method and device for controlling operation using temperature deviation in multi-chip package'20179,576,668'Semiconductor device and operating method thereof'20179,478,304'Semiconductor memory device and operating method thereof'20169,171,605'Concentrated address detecting method of semiconductor device and concentrated address detecting circuit using the same'20157,853,840'Semiconductor memory device and methods thereof'20107,830,490'Liquid crystal display'20107,714,971'Liquid crystal display'20107,525,863'Logic circuit setting optimization condition of semiconductor integrated circuit regardless of fuse cut'20097,466,608'Data input/output circuit having data inversion determination function and semiconductor memory device having the same'20087,408,482'Integrated circuit devices having data inversion circuits therein with multi-bit prefetch structures and methods of operating same'20087,368,330'Semiconductor device having fuse circuit on cell region and method of fabricating the same'20087,366,822'Semiconductor memory device capable of reading and writing data at the same time'20087,187,615'Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line'20077,142,021'Data inversion circuits having a bypass mode of operation and methods of operating the same'20067,110,276'Integrated circuit memory devices reducing propagation delay differences between signals transmitted to separate spaced-apart memory blocks therein'20066,992,506'Integrated circuit devices having data inversion circuits therein with multi-bit prefetch structures and methods of operating same'20066,825,511'Semiconductor device having fuse circuit on cell region and method of fabricating the same'20046,704,237'Circuits for controlling internal power supply voltages provided to memory arrays based on requested operations and methods of operating'20046,323,693'Current sense amplifier circuit using dummy bit line'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
2006–2021Based in Gyeonggi-do, KR· patent location history
2008–2021Based in Yongin-si, KR· patent location history
2010Patents assigned to SAMSUNG MOBILE DISPLAY CO LTD (2)· patent assignee history
2016–2019Patents assigned to SK HYNIX INC (10)· patent assignee history
2016–2019Based in Chungcheongbuk-do, KR· patent location history
2017–2019Based in Cheongju-si, KR· patent location history
2019–2020Patents assigned to SK IE TECH CO LTD (3)· patent assignee history
2019–2020Patents assigned to SK INNOVATION CO LTD (3)· patent assignee history
2019–2020Based in Daejeon, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD252001–2021
SK HYNIX INC102016–2019
SK IE TECH CO LTD32019–2020
SK INNOVATION CO LTD32019–2020
SAMSUNG MOBILE DISPLAY CO LTD22010
Locations
LocationPatentsSpan
Yongin-si, KR132008–2021
Gyeonggi-do, KR72006–2021
Chungcheongbuk-do, KR62016–2019
Cheongju-si, KR52017–2019
Daejeon, KR32019–2020