Inventor

Takayoshi Arai

Inventor

Nagahama, JP

Overview

1988–2000

Patent span

Chemistry

Primary field (CPC C)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material21%

G03GElectrography21%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry6%

H01JElectric discharge tubes or discharge lamps6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

C07BGeneral methods of organic chemistry4%

C07CAcyclic or carbocyclic compounds4%

C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium4%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%

PatentTitleYear

6,090,969'Process for the preparation of an asymmetric compound using a metal complex'2000 5,847,186'Process for preparing asymmetric compound by using metal complex'1998 5,061,511'Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method'1991 5,038,713'Microwave plasma treating apparatus'1991 5,019,887'Non-single crystalline photosensor with hydrogen and halogen'1991 5,002,793'Process for forming film in a three-chambered apparatus having two chamber faces coated with films of at least 10.sup.6 .OMEGA. cm resistance'1991 4,971,832'HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V'1990 4,957,772'Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method'1990 4,953,498'Microwave plasma CVD apparatus having substrate shielding member'1990 4,940,642'Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer'1990 4,930,442'Microwave plasma CVD apparatus having an improved microwave transmissive window'1990 4,908,329'Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process'1990 4,908,330'Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process'1990 4,897,284'Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method'1990 4,897,281'Process for the formation of a functional deposited film by way of microwave plasma CVD method'1990 4,824,749'Light receiving member for use in electrophotography and process for the production thereof'1989 4,818,655'Electrophotographic light receiving member with surface layer of a-(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1-0.99999 and y is 0.3-0.59'1989 4,804,604'Light receiving member for use in electrophotography'1989 4,792,509'Light receiving member for use in electrophotography'1988 4,788,120'Light receiving member for use in electrophotography having an amorphous silicon layer'1988 4,786,574'Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap'1988 4,780,387'Light receiving member for use in electrophotography comprising amorphous silicon layer and polycrystalline layer'1988 4,738,913'Light receiving member for use in electrophotography comprising surface layer of a-Si:C:H'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–1991Patents assigned to CANON KK (21)· patent assignee history

1988–1991Based in Nagahama, JP· patent location history

1988–1990Based in Ueno, JP· patent location history

1988Based in Nagahami, JP· patent location history

1989–1990Based in Shiga, JP· patent location history

1998Patents assigned to NAGASE & CO LTD (1)· patent assignee history

1998–2000Based in Tokyo, JP· patent location history

2000Patents assigned to NAGASE AND CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
CANON KK	21	1988–1991
NAGASE & CO LTD	1	1998
NAGASE AND CO LTD	1	2000

Locations

Location	Patents	Span
Nagahama, JP	11	1988–1991
Ueno, JP	5	1988–1990
Shiga, JP	4	1989–1990
Tokyo, JP	2	1998–2000
Nagahami, JP	1	1988