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Inventor

Yasunori Yamashita

Inventor
Tokyo, JP

Overview

18→
Patents
1999–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices26%
A61BDiagnosis16%
A61MDevices for introducing media into, or onto, the body16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H01LSemiconductor devices5%
B29CShaping or joining of plastics3%
B29DProducing particular articles from plastics or from substances in a plastic state3%
B29LIndexing scheme associated with subclass b29c, relating to particular articles3%
G06FElectric digital data processing3%
PatentTitleYear
10,842,465Medical device202010,792,475Medical tube and medical device202010,299,757Medical tube, catheter, and method for producing medical tube201910,256,339Semiconductor device for power transistor201910,109,733Semiconductor device for power transistor201810,022,518Medical tube and catheter20189,119,936'Catheter with spiral slit terminating in slit termination portion oriented to suppress crack occurrence'20158,780,269'Contents playback device, television receiver, information provision system, information provision method, information provision program, and recording medium'20148,523,841'Catheter with spiral slit terminating in slit termination portion oriented to suppress crack occurrence'20137,778,807'Simulation model generator of causality phenomena and events'20107,339,236'Semiconductor device, driver circuit and manufacturing method of semiconductor device'20086,693,344'Semiconductor device having low and high breakdown voltage transistors'20046,670,252'Method of manufacturing semiconductor device'20036,573,582'Semiconductor device'20036,518,158'Method of manufacturing a semiconductor device including a fuse'20036,285,058'Insulated gate semiconductor device and method of manufacturing the same'20016,191,466'Semiconductor device containing a diode'20015,929,482'Power semiconductor device and method for manufacturing the same'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2003Patents assigned to MITSUBISHI ELECTRIC CORP (6)· patent assignee history
1999–2001Patents assigned to RYODEN SEMICONDUCTOR SYST ENG (2)· patent assignee history
1999–2010Based in Tokyo, JP· patent location history
2001–2004Based in Hyogo, JP· patent location history
2004–2008Patents assigned to RENESAS TECH CORP (2)· patent assignee history
2013–2020Patents assigned to TERUMO CORP (6)· patent assignee history
2013–2020Based in Fujinomiya, JP· patent location history
2018–2019Patents assigned to RENESAS ELECTRONICS CORP (2)· patent assignee history
2018–2019Based in Shizuoka, JP· patent location history
2018–2019Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP61999–2003
TERUMO CORP62013–2020
RENESAS ELECTRONICS CORP22018–2019
RENESAS TECH CORP22004–2008
RYODEN SEMICONDUCTOR SYST ENG21999–2001
Locations
LocationPatentsSpan
Tokyo, JP61999–2010
Fujinomiya, JP42013–2020
Hyogo, JP32001–2004
Shizuoka, JP22018–2019
Ibaraki, JP22018–2019