Inventor
Jack L. Jewell
Inventor
Boulder, CO, US
Overview
Patents· 77 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light31%
G02BOptical elements, systems or apparatus15%
H10HInorganic light-emitting semiconductor devices having potential barriers14%
B82YSpecific uses or applications of nanostructures8%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
H04LTransmission of digital information, e.g. telegraphic communication5%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
C12QMeasuring or testing processes involving enzymes, nucleic acids or microorganisms3%
B01LChemical or physical laboratory apparatus for general use2%
G11BInformation storage based on relative movement between record carrier and transducer2%
PatentTitleYear
10,741,990Compact mode-locked laser module202010,533,945Optical system and assay chip for probing, detecting and analyzing molecules202010,283,928Compact mode-locked laser module201910,246,742Pulsed laser and bioanalytic system201910,048,208Integrated device with external light source for probing detecting and analyzing molecules20189,863,880'Optical system and assay chip for probing, detecting and analyzing molecules'20189,617,594'Pulsed laser and bioanalytic system'20177,802,930'Low-noise optical transmitter'20107,796,850'Multiple-pathway optical transmitter'20107,627,014'Extended wavelength strained layer lasers having nitrogen disposed therein'20097,542,493'Temperature compensated lasers'20097,330,494'Conductive element with lateral oxidation barrier'20087,215,692'Conductive element with lateral oxidation barrier'20077,079,560'Light emitting device'20066,980,579'Temperature compensated lasers'20056,931,181'Opto-mechanical assembly'20056,920,165'Extended wavelength strained layer lasers having nitrogen disposed therein'20056,765,943'Light emitting device'20046,741,777'Opto-mechanical assembly'20046,556,607'Temperature compensated lasers'20036,546,031'Extended wavelength strained layer lasers having strain compensated layers'20036,542,672'Opto-mechanical assembly'20036,459,713'Conductive element with lateral oxidation barrier'20026,421,474'Electro-opto mechanical assembly for coupling a light source or reciever to an optical waveguide'20026,359,920'Extended wavelength strained layer lasers having strain compensated layers'20026,269,109'Conductive element with lateral oxidation barrier'20016,243,508'Electro-opto-mechanical assembly for coupling a light source or receiver to an optical waveguide'20016,075,804'Semiconductor device having an oxide defined aperture'20006,014,395'Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device'20005,985,683'Method for producing an aperture comprising an oxidized region and a semiconductor material'19995,960,018'Extended wavelength strained layer lasers having strain compensated layers'19995,940,564'Device for coupling a light source or receiver to an optical waveguide'19995,903,589'Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device'19995,897,329'Method for producing an electrically conductive element for semiconductor light emitting devices'19995,882,948'Method for fabricating a semiconductor device'19995,881,085'Lens comprising at least one oxidized layer and method for forming same'19995,877,519'Extended wavelength opto-electronic devices'19995,859,864'Extended wavelength lasers having a restricted growth surface and graded lattice mismatch'19995,825,796'Extended wavelength strained layer lasers having strain compensated layers'19985,822,356'Intra-cavity lens structures for semiconductor lasers'19985,808,986'Multiple beam optical memory system with solid-state lasers'19985,729,566'Light emitting device having an electrical contact through a layer containing oxidized material'19985,724,374'Aperture comprising an oxidized region and a semiconductor material'19985,719,891'Conductive element with lateral oxidation barrier'19985,719,894'Extended wavelength strained layer lasers having nitrogen disposed therein'19985,719,895'Extended wavelength strained layer lasers having short period superlattices'19985,642,376'Visible light surface emitting semiconductor laser'19975,625,636'Integration of photoactive and electroactive components with vertical cavity surface emitting lasers'19975,617,445'Quantum cavity light emitting element'19975,570,697'Sensor for analyzing molecular species'19965,526,182'Multiple beam optical memory system'19965,525,810'Self calibrating solid state scanner'19965,523,884'Optical beam delivery system'19965,500,540'Wafer scale optoelectronic package'19965,483,511'Multiple beam optical memory system with solid-state lasers'19965,446,754'Phased array semiconductor laser'19955,331,654'Polarized surface-emitting laser'19945,325,386'Vertical-cavity surface emitting laser assay display system'19945,319,496'Optical beam delivery system'19945,295,147'Vertical cavity, surface-emitting laser with expanded cavity'19945,283,447'Integration of transistors with vertical cavity surface emitting lasers'19945,266,794'Vertical-cavity surface emitting laser optical interconnect technology'19935,258,990'Visible light surface emitting semiconductor laser'19935,245,622'Vertical-cavity surface-emitting lasers with intra-cavity structures'19935,206,872'Surface emitting laser'19935,077,483'Network topology for reduced blocking and photonic system implementation thereof'19915,036,512'Optical apparatus for combining light beam arrays having different wavelengths'19915,034,344'Method of making a surface emitting semiconductor laser'19914,999,842'Quantum well vertical cavity laser'19914,949,350'Surface emitting semiconductor laser'19904,861,976'Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer'19894,767,196'Asymmetric optical logic element'19884,756,606'Apparatus comprising a monolithic nonlinear Fabry-Perot etalon, and method for producing same'19884,741,587'Optical communications system and method for the generation of a sequence of optical pulses by means of induced modulational instability'19884,701,030'Thermal stable optical logic element'19874,630,898'Etalon optical logic gate apparatus and method'19864,573,767'Optical flip-flop system'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–1997Based in Bridgewater, NJ, US· patent location history
1986Based in Tucson, AZ, US· patent location history
1987–1989Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (5)· patent assignee history
1991–1993Patents assigned to AT & T BELL LAB (5)· patent assignee history
1993–2020Based in Boulder, CO, US· patent location history
1996–1998Patents assigned to VIXEL CORP (7)· patent assignee history
1997–2007Patents assigned to PICOLIGHT INC (33)· patent assignee history
2008–2010Patents assigned to JDS UNIPHASE CORP (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PICOLIGHT INC | 33 | 1997–2007 |
| VIXEL CORP | 7 | 1996–1998 |
| AMERICAN TELEPHONE & TELEGRAPH | 5 | 1987–1989 |
| AT & T BELL LAB | 5 | 1991–1993 |
| JDS UNIPHASE CORP | 5 | 2008–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boulder, CO, US | 61 | 1993–2020 |
| Bridgewater, New Jersey, US | 15 | 1986–1997 |
| Tucson, AZ, US | 1 | 1986 |