Inventor
Uzodinma Okoroanyanwu
Inventor
Mountain View, CA, US
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices18%
H10DInorganic electric semiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10KOrganic electric solid-state devices11%
B82YSpecific uses or applications of nanostructures9%
G11CStatic stores9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10BElectronic memory devices6%
H10NElectric solid-state devices not otherwise provided for5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
PatentTitleYear
9,195,132'Mask structures and methods of manufacturing'20158,852,854'Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis'20148,792,161'Optical polarizer with nanotube array'20148,715,912'Method for producing a high resolution resist pattern on a semiconductor wafer'20148,586,269'Method for forming a high resolution resist pattern on a semiconductor wafer'20138,338,061'Fluorine-passivated reticles for use in lithography and methods for fabricating the same'20128,044,387'Semiconductor device built on plastic substrate'20118,012,673'Processing a copolymer to form a polymer memory cell'20118,003,436'Stacked organic memory devices and methods of operating and fabricating'20117,985,513'Fluorine-passivated reticles for use in lithography and methods for fabricating the same'20117,767,985'EUV pellicle and method for fabricating semiconductor dies using same'20107,465,956'Stacked organic memory devices and methods of operating and fabricating'20087,368,225'Two mask photoresist exposure pattern for dense and isolated regions'20087,012,013'Dielectric pattern formation for organic electronic devices'20066,979,837'Stacked organic memory devices and methods of operating and fabricating'20056,977,389'Planar polymer memory device'20056,893,895'CuS formation by anodic sulfide passivation of copper surface'20056,884,735'Materials and methods for sublithographic patterning of gate structures in integrated circuit devices'20056,870,183'Stacked organic memory devices and methods of operating and fabricating'20056,852,586'Self assembly of conducting polymer for formation of polymer memory cell'20056,815,359'Process for improving the etch stability of ultra-thin photoresist'20046,803,178'Two mask photoresist exposure pattern for dense and isolated regions'20046,787,458'Polymer memory device formed in via opening'20046,774,365'SEM inspection and analysis of patterned photoresist features'20046,767,693'Materials and methods for sub-lithographic patterning of contact, via, and trench structures in integrated circuit devices'20046,764,808'Self-aligned pattern formation using wavelenghts'20046,753,247'Method(s) facilitating formation of memory cell(s) and patterned conductive'20046,716,571'Selective photoresist hardening to facilitate lateral trimming'20046,653,231'Process for reducing the critical dimensions of integrated circuit device features'20036,630,288'Process for forming sub-lithographic photoresist features by modification of the photoresist surface'20036,589,713'Process for reducing the pitch of contact holes, vias, and trench structures in integrated circuits'20036,589,709'Process for preventing deformation of patterned photoresist features'20036,518,175'Process for reducing critical dimensions of contact holes, vias, and trench structures in integrated circuits'20036,475,904'Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques'20026,127,089'Interconnect structure with low k dielectric materials and method of making the same with single and dual damascene techniques'20006,103,445'Photoresist compositions comprising norbornene derivative polymers with acid labile groups'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2014Patents assigned to ADVANCED MICRO DEVICES INC (28)· patent assignee history
2000–2011Based in Mountain View, CA, US· patent location history
2000Based in Austin, TX, US· patent location history
2004–2008Based in Sunnyvale, CA, US· patent location history
2010–2015Patents assigned to GLOBALFOUNDRIES INC (4)· patent assignee history
2010–2015Based in Northampton, MA, US· patent location history
2011Patents assigned to SPANSION LLC (3)· patent assignee history
2011Based in Clifton Park, NY, US· patent location history
2012–2014Patents assigned to OKOROANYANWU UZODINMA (5)· patent assignee history
2012–2014Patents assigned to LEVINSON HARRY J (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ADVANCED MICRO DEVICES INC | 28 | 2000–2014 |
| OKOROANYANWU UZODINMAself | 5 | 2012–2014 |
| GLOBALFOUNDRIES INC | 4 | 2010–2015 |
| LEVINSON HARRY J | 3 | 2012–2014 |
| SPANSION LLC | 3 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mountain View, California, US | 24 | 2000–2011 |
| Northampton, Massachusetts, US | 8 | 2010–2015 |
| Sunnyvale, California, US | 2 | 2004–2008 |
| Clifton Park, New York, US | 1 | 2011 |
| Austin, Texas, US | 1 | 2000 |