Inventor
Gilyong Chung
Inventor
Midland, MI, US
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
C23CCoating metallic material5%
C30BSingle-crystal growth5%
PatentTitleYear
9,337,277'High voltage power semiconductor device on SiC'20169,337,027'Method of manufacturing substrates having improved carrier lifetimes'20168,860,040'High voltage power semiconductor devices on SiC'20147,727,340'Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects'20107,235,438'Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects'20076,939,756'Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2010Patents assigned to UNIV AUBURN (3)· patent assignee history
2005–2010Based in Tampa, FL, US· patent location history
2007–2016Based in Midland, MI, US· patent location history
2010Patents assigned to UNIV VANDERBILT (1)· patent assignee history
2014–2016Patents assigned to DOW CORNING (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DOW CORNING | 3 | 2014–2016 |
| UNIV AUBURN | 3 | 2005–2010 |
| UNIV VANDERBILT | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Midland, MI, US | 4 | 2007–2016 |
| Tampa, Florida, US | 2 | 2005–2010 |