Inventor
Satoshi Ae
Inventor
Tokyo, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light50%
B82YSpecific uses or applications of nanostructures20%
C30BSingle-crystal growth10%
G02BOptical elements, systems or apparatus10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
PatentTitleYear
10,020,637Method for manufacturing semiconductor device and semiconductor device20189,698,569'Method for manufacturing semiconductor device and semiconductor device'20177,782,919'Buried semiconductor laser and method for manufacturing the same'20105,790,580'Semiconductor optical integrated device'19985,785,755'Method of growing multilayer crystal films by metal organic vapor phase epitaxy'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998Patents assigned to NEC CORP (2)· patent assignee history
1998–2018Based in Tokyo, JP· patent location history
2010Patents assigned to NEC ELECTRONICS CORP (1)· patent assignee history
2010–2017Based in Kanagawa, JP· patent location history
2017–2018Patents assigned to RENESAS ELECTRONICS CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 2 | 1998 |
| RENESAS ELECTRONICS CORP | 2 | 2017–2018 |
| NEC ELECTRONICS CORP | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 3 | 1998–2018 |
| Kanagawa, JP | 2 | 2010–2017 |