Inventor
Iwao Teramoto
Inventor
Ibaraki, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10DInorganic electric semiconductor devices15%
G11CStatic stores8%
H03JTuning resonant circuits8%
H03KPulse technique8%
H04BTransmission8%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
PatentTitleYear
4,675,074'Method of manufacturing semiconductor device'19874,651,322'Semiconductor laser'19874,432,092'Semiconductor laser'19844,351,099'Method of making FET utilizing shadow masking and diffusion from a doped oxide'19824,194,927'Selective thermal oxidation of As-containing compound semiconductor regions'19804,053,798'Negative resistance device'19773,937,949'Optical remote control apparatus employing light scattering plate'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–1982Patents assigned to MATSUSHITA ELECTRONICS CORP (3)· patent assignee history
1976–1987Based in Ibaraki, JP· patent location history
1980–1987Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 4 | 1980–1987 |
| MATSUSHITA ELECTRONICS CORP | 3 | 1976–1982 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ibaraki, JP | 7 | 1976–1987 |