Inventor

Taehyun Kim

Inventor
San Diego, CA, US

Overview

98→
Patents
2006–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 98 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores19%
H01LSemiconductor devices9%
G06FElectric digital data processing8%
H10DInorganic electric semiconductor devices6%
H10KOrganic electric solid-state devices6%
H01HElectric switches5%
G09GArrangements or circuits for control of indicating devices using static means to present variable information4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H04MTelephonic communication3%
LOC133%
PatentTitleYear
10,862,506Encoder, encoding method, decoder, decoding method, and codec system202010,826,013Organic light emitting display device202010,819,844Intelligent electronic device and mode setting method202010,699,164Training template construction apparatus for facial expression recognition and method thereof202010,600,852Organic light-emitting display apparatus and method of manufacturing the same202010,504,447GOA unit and driving method thereof, GOA circuit, display device201910,446,793Display apparatus201910,410,572Display device including timing controller201910,386,978Display apparatus201910,333,546Encoder, encoding method, decoder, decoding method, and codec system201910,312,718System for levitating mobile terminal201910,277,265Case assembly for mobile terminal201910,263,645Error correction and decoding201910,248,911Ion trapping device with insulating layer exposure prevention and method for manufacturing same201910,242,859MEMS-based 3D ion trapping device for using laser penetrating ion trapping structure, and method for manufacturing same201910,222,835Mobile terminal201910,224,383Organic light-emitting display apparatus including pixel defining layer having first and second inclination portions and method of manufacturing the same201910,186,560Organic light-emitting display apparatus and method of manufacturing the same201910,178,518Mobile terminal and method for controlling same201910,114,411Electronic device and manufacturing method therefor201810,050,100Display apparatus201810,019,932Method for writing display data, display apparatus and mobile terminal including the display apparatus20189,966,149OTP cell with reversed MTJ connection20189,905,348'Electromagnetic operating device'20189,886,885'Gamma correction circuit and display device'20189,800,271'Error correction and decoding'20179,768,240'Thin film transistor array substrate and organic light-emitting diode display including the same'20179,753,874'Multi-step programming of heat-sensitive non-volatile memory (NVM) in processor-based systems'20179,711,750'Method of forming a conductive pattern and method of manufacturing an organic light-emitting display including the same'20179,698,210'Display device and method of manufacturing the same'20179,679,663'OTP cell with reversed MTJ connection'20179,672,885'MRAM word line power control scheme'20179,666,274'System and method for MRAM having controlled averagable and isolatable voltage reference'20179,612,908'Performing memory data scrubbing operations in processor-based memory in response to periodic memory controller wake-up periods'20179,583,170'Adjusting resistive memory write driver strength based on a mimic resistive memory write operation'20179,583,171'Write driver circuits for resistive random access memory (RAM) arrays'20179,552,244'Real time correction of bit failure in resistive memory'20179,548,179'Ion trap apparatus and method for manufacturing same'20179,472,257'Hybrid magnetoresistive read only memory (MRAM) cache mixing single-ended and differential sensing'20169,455,014'Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems'20169,455,031'System and method for MRAM having controlled averagable and isolatable voltage reference'20169,455,013'System and method to trim reference levels in a resistive memory'20169,437,317'Nonvolatile memory device, memory system having the same, external power controlling method thereof'20169,437,667'Display device'20169,431,472'Organic light-emitting diode (OLED) display and method of manufacturing the same'20169,431,129'Variable read delay system'20169,379,201'Electrostatic discharge diodes and methods of forming electrostatic discharge diodes'20169,372,750'Method and apparatus for non-volatile RAM error re-mapping'20169,368,294'Solenoid operated device'20169,349,457'High voltage switch, nonvolatile memory device comprising same, and related method of operation'20169,336,847'Method and apparatus for generating a reference for use with a magnetic tunnel junction'20169,338,271'Mobile terminal and method forming case of the same'20169,324,521'Power switchgear'20169,293,243'Electromagnetic device and switching device using same'20169,275,714'Read operation of MRAM using a dummy word line'20169,262,263'Bit recovery system'20169,251,881'System and method to trim reference levels in a resistive memory'20169,245,610'OTP cell with reversed MTJ connection'20169,224,467'Resistance-based memory having two-diode access device'20159,207,016'Laundry treating apparatus'20159,183,082'Error detection and correction of one-time programmable elements'20159,165,631'OTP scheme with multiple magnetic tunnel junction devices in a cell'20159,159,381'Tunable reference circuit'20159,153,307'System and method to provide a reference cell'20159,147,489'High voltage switch and a nonvolatile memory device including the same'20159,147,488'Nonvolatile memory device, memory system having the same, external power controlling method thereof'20159,147,457'Reference cell repair scheme'20159,140,747'Sense amplifier offset voltage reduction'20159,135,975'Write pulse width scheme in a resistive memory'20159,130,011'Apparatus for mounting semiconductor device'20159,093,462'Electrostatic discharge diode'20159,076,511'Nonvolatile memory device and memory system including the same'20159,064,643'Mobile terminal'20159,064,589'Three port MTJ structure and integration'20159,047,964'Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness'20159,030,280'Electromagnetically operated device and switching device including the same'20158,941,022'Switching apparatus'20158,929,167'MRAM self-repair with BIST logic'20158,923,044'MTP MTJ device'20148,913,450'Memory cell array with reserved sector for storing configuration information'2014D0709462'Case for vacuum circuit breaker'20148,787,098'System and method of reference cell testing'2014D0705180'Conductor terminal for vacuum circuit breaker'2014D0703622'Shield for vacuum circuit breaker'2014D0702192'Actuator for vacuum circuit breaker'20148,680,956'Electromagnet device and switch device using electromagnet device'20148,675,390'System and method for MRAM having controlled averagable and isolatable voltage reference'20148,638,596'Non-volatile memory saving cell information in a non-volatile memory array'20148,614,912'Magnetic random access memory (MRAM)layout with uniform pattern'2013D0695232'Vacuum circuit breaker'2013D0694711'Insulator for vacuum circuit breaker'20138,582,354'Method and apparatus for testing a resistive memory element'20138,488,363'Write energy conservation in memory'20138,422,671'Methods of encryption and decryption using operand ordering and encryption systems using the same'20138,248,193'Electromagnetic switch for auxiliary-rotation starter'20127,686,912'Method for bonding substrates and method for irradiating particle beam to be utilized therefor'20107,674,596'Transfected cell line and a method using the same for the high throughput screening for inhibitors of the T-type calcium channel alpha-1H'20106,984,521'HEK293 cell line for activity studies and HTS system of α1G T-type Ca2+ channel'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2020Based in Seoul, KR· patent location history
2010–2020Based in Yongin-si, KR· patent location history
2012–2020Patents assigned to KIM TAEHYUN (23)· patent assignee history
2012–2018Patents assigned to MITSUBISHI ELECTRIC CORP (14)· patent assignee history
2012–2018Based in Chiyoda-ku, JP· patent location history
2013–2019Patents assigned to QUALCOMM INC (43)· patent assignee history
2013–2017Patents assigned to KIM JUNG PILL (12)· patent assignee history
2013–2018Based in San Diego, CA, US· patent location history
2016–2020Patents assigned to SAMSUNG DISPLAY CO LTD (12)· patent assignee history
2016–2019Based in Cupertino, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
QUALCOMM INC432013–2019
KIM TAEHYUNself232012–2020
MITSUBISHI ELECTRIC CORP142012–2018
KIM JUNG PILL122013–2017
SAMSUNG DISPLAY CO LTD122016–2020
Locations
LocationPatentsSpan
San Diego, California, US342013–2018
Seoul, KR172006–2020
Chiyoda-ku, JP112012–2018
Cupertino, California, US92016–2019
Yongin-si, KR82010–2020