Inventor
CHING-CHUN WANG
Inventor
TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices35%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H10DInorganic electric semiconductor devices9%
H04NPictorial communication, e.g. television4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
PatentTitleYear
12,598,825Substrate contact in wafer backside202612,557,405Structure and method for backside-illuminated image device202612,464,839Vertical gate field effect transistor202512,315,843Hybrid bonding technology for stacking integrated circuits202512,300,670Hybrid bond pad structure202512,261,196Metal-insulator-metal device capacitance enhancement202512,243,907Multi-layer trench capacitor structure202512,211,876Extra doped region for back-side deep trench isolation202511,996,433Pad structure for front side illuminated image sensor202411,984,465Multiple deep trench isolation (MDTI) structure for CMOS image sensor202411,948,949Vertical gate field effect transistor202411,916,100Multi-layer trench capacitor structure202411,894,410Bond pad structure for bonding improvement202411,804,473Hybrid bond pad structure202311,756,972Apparatus for reducing optical cross-talk in image sensors202311,728,366Extra doped region for back-side deep trench isolation202311,705,474Metal reflector grounding for noise reduction in light detector202311,495,630Multiple deep trench isolation (MDTI) structure for CMOS image sensor202211,424,228Semiconductor structure and method for manufacturing the same202211,410,972Hybrid bonding technology for stacking integrated circuits202211,404,460Vertical gate field effect transistor202211,387,167Semiconductor structure and manufacturing method for the same202211,342,373Manufacturing method of image sensing device202211,322,481Hybrid bonding technology for stacking integrated circuits202211,322,540Pad structure for front side illuminated image sensor202211,282,802Semiconductor device structure and method for forming the same202211,244,981Bond pad structure for bonding improvement202211,227,889Extra doped region for back-side deep trench isolation202211,222,915Pad structure for front side illuminated image sensor2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (28)· patent assignee history
2022–2026Based in TW· patent location history
2026Patents assigned to TAIWAN SEMICONDUCTOR MANUFACUTURING COMPANY LTD (1)· patent assignee history
2026Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 28 | 2022–2026 |
| TAIWAN SEMICONDUCTOR MANUFACUTURING COMPANY LTD | 1 | 2026 |
| TAIWAN SEMICONDUCTOR MFG COMPANY LTD | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 29 | 2022–2026 |